Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Optically Transparent ITO Film and the Fabrication of Plasma Signboard

투명 전극 ITO 박막의 열처리 영향과 플라즈마 응용 표시소자 제작에 관한 연구

  • Jo, Young Je (Department of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Kim, Jae-Kwan (Department of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Han, Seung-Cheol (Department of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Kwak, Joon-Seop (Department of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Lee, Ji-Myon (Department of Materials Science and Metallurgical Engineering, Sunchon National University)
  • 조영제 (국립 순천대학교 재료금속공학과) ;
  • 김재관 (국립 순천대학교 재료금속공학과) ;
  • 한승철 (국립 순천대학교 재료금속공학과) ;
  • 곽준섭 (국립 순천대학교 재료금속공학과) ;
  • 이지면 (국립 순천대학교 재료금속공학과)
  • Received : 2008.10.09
  • Published : 2009.01.28
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Abstract

Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

본 연구에서는 2인치 ITO의 타깃으로 ITO박막을 성장시킨 후 RTA 처리로 인한 전기적, 광학적 특성의 변화를 조사하였으며, RTA 처리된 ITO 박막을 이용하여 플라즈마 응용 사인보드를 제작 및 구동하였다. RTA공정으로 열처리한 ITO는 투과도는 증가하며, 비저항은 감소함을 관찰하였으며, 투과도의 증가는 RTA로 인한 결정성의 증가로 인한 결과이고, 비저항의 감소는 결정성의 증가와 더불어 치환형 주석의 원자수가 증가하였다고 사료된다. ITO를 이용하여 사인보드 제작시 방전cell의 압력은 3-5 Torr가 적당함을 알 수 있었으며, 전극 간격을 조절하여 120 V 정도의 낮은 플라즈마 개시 전압을 갖는 플라즈마 응용 사인보드를 성공적으로 제작 할 수 있었다.

Keywords

Acknowledgement

Supported by : Korea Research Foundation

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