Transactions on Electrical and Electronic Materials

  • 제10권4호
  • /
  • Pages.135-139
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  • 2009
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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H2S Gas Sensing Properties of SnO2:CuO Thin Film Sensors Prepared by E-beam Evaporation

  • Sohn, Jae-Cheon (Convergence of IT Devices Institute Busan, Dong-Eui University) ;
  • Kim, Sung-Eun (Convergence of IT Devices Institute Busan, Dong-Eui University) ;
  • Kim, Zee-Won (Convergence of IT Devices Institute Busan, Dong-Eui University) ;
  • Yu, Yun-Sik (Convergence of IT Devices Institute Busan, Dong-Eui University)
  • 발행 : 2009.08.31
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초록

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

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