한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제22권8호
  • /
  • Pages.654-658
  • /
  • 2009
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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AlGaN/GaN 이종접합구조의 표면누설전류에 관한 연구

A Study of Surface Leakage Current of AIGaN/GaN Heterostructures

  • 석오균 (서울대학교 전기.컴퓨터공학부) ;
  • 최영환 (서울대학교 전기.컴퓨터공학부) ;
  • 임지용 (서울대학교 전기.컴퓨터공학부) ;
  • 김영실 (서울대학교 전기.컴퓨터공학부) ;
  • 김민기 (서울대학교 전기.컴퓨터공학부) ;
  • 한민구 (서울대학교 전기.컴퓨터공학부)
  • 발행 : 2009.08.01
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초록

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

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참고문헌

  1. D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Tanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, and T. Egawa, 'AlGaN/GaN Devices for Future Power Switching Systems', Int. Electron Device Meeting Tech. Dig., p. 389, 2005
  2. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, 'GaN: Processing, defects, and devices', J. Appl. Phys., Vol. 86, p. 1, 1999
  3. D. D. Koleske, M. E. Coltrin, S. R. Lee, G. Thaler, K. C. Cross, and M. J. Russell, 'Understanding GaN nucleation layer evolution on sapphire and its impact on GaN dislocation density', Proc. SPIE, Vol. 6841, p. 68410H, 2007 https://doi.org/10.1117/12.758766
  4. 석오균, 최영환, 임지용, 김선재, 김영실, 김민기, 한민구, '식각되지 않은 영역에서의 쇼트키 컨택을 이용한 AlGaN/GaN High-electron- mobility Transistors(HEMTs)', 16회 반도체 학술대회, 2009