Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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Class-E CMOS PAs for GSM Applications

  • Lee, Hong-Tak (School of EECS, Korea Advanced Institute of Science and Technology) ;
  • Lee, Yu-Mi (School of EECS, Korea Advanced Institute of Science and Technology) ;
  • Park, Chang-Kun (Hynix Semiconductor Inc.) ;
  • Hong, Song-Cheol (School of EECS, Korea Advanced Institute of Science and Technology)
  • Published : 2009.03.31
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Abstract

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

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References

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