Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers

나노 적층 구조를 응용한 저항성 기반 비휘발성 메모리 소자 특성 제어

  • You, Yil-Hwan (Department of Materials Science and Engineering, Hongik University) ;
  • Hwang, Jin-Ha (Department of Materials Science and Engineering, Hongik University)
  • 유일환 (홍익대학교 신소재공학과) ;
  • 황진하 (홍익대학교 신소재공학과)
  • Published : 2009.05.31
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Abstract

Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.

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References

  1. C. Lee, T. -H. Hou, and E. C. -C. Kan, 'Nonvolatile Memory With a Metal Nanocrystal/Nitride Heterogeneous Floating-Gate,' Electron Devices, IEEE Trans., 52 2697-702 (2005) https://doi.org/10.1109/TED.2005.859615
  2. S. -Y Lee, K. -J. Choi, S. -O. Ryu, S. -M. Yoon, N. -Y. Lee, Y. -S. Park, S. -H. Kim, S. -H. Lee, and B. -G. Yu, 'Polycrystalline Silicon-germanium Heating Layer for Phasechange Memory Applications,' Appl. Phys. Lett., 89 053517 (1)-03517(3) (2006) https://doi.org/10.1063/1.2335363
  3. C. -C. Hung, Y. -J. Lee, M. -J. Kao, Y. -H. Wang, R. -F. Huang, W. -C. Chen, Y. -S. Chen, K. -H. Shen, M. -J. Tsai, W. -C. Lin, D. D. -L. Tang, and S. Chao, 'Wide Operation Margin of Toggle Mode Switching for Magnetic Random Access Memory with Preceding Negative Pulse Writing Scheme', Appl. Phys. Lett., 88 112501(1)-(3) (2006) https://doi.org/10.1063/1.2181628
  4. D. Ma, M. Aguiar, J. A. Freire, and I. A. Hummelgen, 'Organic Reversible Switching Devices for Memory Applications,' Mater., 12 1063-66 (2000)
  5. J. F. Gibbons and W. E. Beadle, 'Switching Properties of tHin Nickel Oxide Films.' Solid-State Electronics, 7 785-97 (1964) https://doi.org/10.1016/0038-1101(64)90131-5
  6. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J.-S. Zhao, and C. S. Hwang, 'Identification of a Determining Parameter for Resistive Switching of $TiO_2$ Thin Films.' Appl. Phys. Lett., 86 262907(1)-26297(2) (2005)
  7. W. R. Hiatt and T. W. Hickmott, 'Bistable Switching in Niobium Oxide Diodes,' Appl. Phys. Lett., 6 106 (1965) https://doi.org/10.1063/1.1754187
  8. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, 'Reproducible Switching Effect in Thin Oxide Films for Memory Applications,' Appl. Phys. Lett., 77 139-141 (2000) https://doi.org/10.1063/1.126902
  9. D. Choi, D. Lee, H. Sim, M. Chang, and H. Hwang, 'Reversible Resistive Switching of SrTiOx Thin Films for Nonvolatile Memory Applications,' Appl. Phys. Lett., 88 082904(1)-082904(3) (2006) https://doi.org/10.1063/1.2178405
  10. C. Papagianni, Y. B. Nian, Y. Q. Wang, N. J. Wu, and A. Ignatiev, 'Impedance Study of Reproducible Switching Memory Effect,' Non-Volatile Memory Technology Symposium, 2004 125-28 (2004)
  11. S. Seo, M. J. Lee, D. C. Kim, S. E. Ahn, B.-H Park, Y. S. Kim, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, J.-S. Kim, J. S. Choi, J. H. Lee, S. H. Jeon, S. H. Hong, and B. H. Park, 'Electrode Dependence of Resistance Switching in Polycrystalline NiO Films,' Appl. Phys. Lett., 87 263507(1)-(3) (2005) https://doi.org/10.1063/1.2150580
  12. J.-K. Kang and S.-W. Rhee, 'Chemical Vapor Deposition of Nickel Oxide Films From $Ni(C_5H_5)/O_2$/TEX>,' Thin Solid Films 391 57-61 (2001) https://doi.org/10.1016/S0040-6090(01)00962-2
  13. K. S. Kim and N. Winograd, 'X-ray Photoelectron Spectroscopic Studies of Nickel-oxygen Surfaces Using Oxygen and Argon Ion Bombardment,' Surf. Sci., 43 625-43 (1974) https://doi.org/10.1016/0039-6028(74)90281-7
  14. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, 'Electrical Phenomena in Oxide Films,' Rep. Prog. Phys., 33 1129-91 (1970) https://doi.org/10.1088/0034-4885/33/3/306