Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition

원격 플라즈마 원자층 증착법을 이용한 Al2O3/GaN MIS 구조의 제작 및 전기적 특성

  • 윤형선 (청주대학교 전자공학과) ;
  • 김현준 (청주대학교 전자공학과) ;
  • 이우석 (청주대학교 전자공학과) ;
  • 곽노원 (청주대학교 전자공학과) ;
  • 김가람 (청주대학교 전자공학과) ;
  • 김광호 (청주대학교 전자공학과)
  • Published : 2009.04.01
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Abstract

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

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References

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