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Field Probe Sensor Based on the Electro-Optic Effect

전기광학효과를 이용한 전계 프로브 센서

  • Kyoung, Un-Hwan (Department of Electronic Engineering, Kwangwoon University) ;
  • Kim, Gun-Duk (Department of Electronic Engineering, Kwangwoon University) ;
  • Eo, Yun-Seong (Department of Electronic Engineering, Kwangwoon University) ;
  • Lee, Sang-Shin (Department of Electronic Engineering, Kwangwoon University)
  • Published : 2009.04.25

Abstract

A compact electric field probe sensor incorporating two different electro-optic materials of $LiNbO_3$ and GaAs was proposed and fabricated, and it was used to measure the strength of the horizontal and vertical fields generated by a microstrip ring-resonator filter. The sensitivities of the sensors in $LiNbO_3$ and GaAs were $9.315{\mu}V/\sqrt{Hz}$ and ${\sim}49.346{\mu}V/\sqrt{Hz}$ respectively, and their signal to noise ratios were approximately ${\sim}50\;dB$ and ${\sim}40\;dB$ respectively. And the operating frequency range was up to ${\sim}1.2\;GHz$. The electric field profile for the test circuit was scanned and found to be in good agreement with that obtained by using the HFSS simulation.

본 논문에서는 전기광학효과를 갖는 $LiNbO_3$ 및 GaAs 물질 기반의 전계 프로브 센서를 제안하고 구현하였다. 이 센서를 이용하여 RF 링 공진필터 소자로부터 방사되는 수평 및 수직방향 성분의 필드세기를 측정하였다. 구현된 $LiNbO_3$ 및 GaAs센서로부터 계산된 감도는 각각 $9.315{\mu}V/\sqrt{Hz}$$49.346{\mu}V/\sqrt{Hz}$였으며, 신호 대 잡음비는 ${\sim}50\;dB$${\sim}40\;dB$였다. 그리고 각 센서의 주파수 응답특성은 ${\sim}1.2\;GHz$였다. 마지막으로 센서를 이용하여 테스트 회로의 근접 필드 분포를 측정하였으며, 이는 HFSS 시뮬레이션 결과와 잘 일치하였다.

Keywords

References

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