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Hg1-xCdxTe를 이용한 64x1 선형 적외선 감지 소자 제작

Fabrication of 64x1 linear array infrared detector using Hg1-xCdxTe

  • 김진상 (한국과학기술연구원 박막재료연구센터) ;
  • 서상희 (한국과학기술연구원 나노소재기술개발사업단)
  • Kim, Jin-Sang (Thin Film Materials Research Center, Korea Institute of Science and Technology) ;
  • Suh, Sang-Hee (Center for Nanostructured Materials Technology, Korea Institute of Science and Technology)
  • 발행 : 2009.03.31

초록

$64{\times}1$ forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.

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참고문헌

  1. Antoni Rogalski, 'Heterostructure infrared photovoltaic detectors' Infrared Physics & Technology, vol. 41, pp. 213-238, 2000 https://doi.org/10.1016/S1350-4495(00)00042-6
  2. 김병혁, 윤난영, 이희철, 김충기, 응용물리, 제11권, S175, 1998
  3. 허옥명, 김태훈, 권정현, 정민석, 임남수, 손옥희, 한석룡, 응용물리, 제12권, S62, 1999
  4. J. Tunnicliffe, S. J. C. Irvine, O. D. Dosser and J. B. Mullin, 'A new MOVPE technique for the growth of highly uniform CMT', J. Crystal Growth vol. 68, pp. 245-253, 1984 https://doi.org/10.1016/0022-0248(84)90423-8
  5. S-H Suh, J-H Song, and S-W Moon, 'Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe/GaAs with good electrical properties', J. Crystal Growth, vol. 159, pp. 1132-1135, 1996. https://doi.org/10.1016/0022-0248(95)00697-4
  6. G. N. Pain, C. Sandford, and G. K. G. Smith, 'Low temperature MOCVD of $Hg_1_xCd_x$ Te on 311, 511, 711 and shaped GaAs', J. Crystal Growth, vol. 107, pp. 610-620, 1991 https://doi.org/10.1016/0022-0248(91)90529-E