한국정보통신학회논문지 (Journal of the Korea Institute of Information and Communication Engineering)

  • 제13권12호
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  • Pages.2655-2661
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  • 2009
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  • 2234-4772(pISSN)
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  • 2288-4165(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
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단채널 MOSFET의 열잡음 모델링을 위한 잡음 파라메터의 분석과 추출방법

Analysis and extraction method of noise parameters for short channel MOSFET thermal noise modeling

  • 김규철 (목포해양대학교 해양전자통신공학부)
  • 발행 : 2009.12.31
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초록

단채널 MOSFET의 열잡음 모델링을 위한 정밀한 잡음 파라메터를 유도하고 추출했다. MOSFET의 잡음 파라메터를 계산하기 위한 Fukui모델을 단채널에서의 기생성분의 영향을 고려하여 수정하였고, 기존의 모델식과 비교하였다. 또한 소자 고유의 잡음원을 얻기 위해서 서브마이크론 MOSFET의 잡음 파라메터(최소잡음지수 $F_{min}$, 등가잡음 저항 $R_n$, 최적 소스어드미턴스 $Y_{opt}=G_{opt}+B_{opt}$)를 추출하는 방법을 제시하였다. 이러한 추출방법을 통하여 프로브패드의 영향과 외부기생소자 영향을 제거한 MOSFET 고유의 잡음 파라메터가 RF잡음측정으로부터 직접 얻어지게 된다.

In this paper, an accurate noise parameters for thermal noise modeling of short channel MOSFET is derived and extracted. Fukui model for calculating the noise parameters of a MOSFET is modified by considering effects of parasitic elements in short channel, and it is compared with conventional noise model equation. In addition, for obtaining the intrinsic noise sources of devices, noise parameters(minimum noise figure $F_{min}$, equivalent noise resistance $R_n$ optimized source admittance $Y_{opt}=G_{opt}+B_{opt}$) in submicron MOSFETs is extracted. With this extraction method, the intrinsic noise parameters of MOSFET without effects of probe pad and extrinsic parasitic elements from RF noise measurements can be directly obtained.

키워드

참고문헌

  1. C.C.Enz, and Y.Cheng, 'MOS TransistorModeling for RF IC,' IEEE J. Solid-State Circuits, vol. 35, no.2, pp. 186-201, 2000 https://doi.org/10.1109/4.823444
  2. G.Kim, Y.Shimizu, B.Murakami, M.Goto, K.Ueda, T.Kihara, T.Matsuoka, and K. Taniguchi, 'Small-Signal and Noise Model of FD-SOI MOS Devices for Low Noise Amplifier,' IEEE Trans. Electron Devices, vol. 53, no.4, pp. 1-10, 2006 https://doi.org/10.1109/TED.2006.872795
  3. A.Abide, 'High-Frequency Noise Measurem ets on FET's with Small Dimensions,' IEEE Trans. Electron Devices, vol. 33, pp. 1801-1805, 1986 https://doi.org/10.1109/T-ED.1986.22743
  4. I.Kwon, M.Je, K.Lee, and H.Shin 'A Simple and Analytical Parameter-Extraction Method of a Microwave MOSFET,' IEEE Trans. MTT, vol. 50, no. 6, pp. 1503-1509, 2002 https://doi.org/10.1109/TMTT.2002.1006411
  5. Fukuie.H 'Optimal noise figure of microwave GaAs MESFET,' IEEE Trans. Electron Devices, vol. 26, pp. 1032-1037, 1979 https://doi.org/10.1109/T-ED.1979.19541
  6. C.H.Oxley,' Calculation of minimum noise figure using simple Fukui equation for gallium nitride(GaN) HEMTs,' Solid-State Electronics vol. 45, pp. 677-682, 2001 https://doi.org/10.1016/S0038-1101(01)00069-7
  7. K.Han, H.Shin, and K.Lee,' Drain current thermal noise modeling for deep submicron n- and p- channel MOSFETs,' Solid-State Elec tronics vol. 48, pp. 2255-2262, 2004 https://doi.org/10.1016/j.sse.2004.05.081
  8. G.Knoblinger 'RF-Noise of Deep-Submicron MOSFETs Extraction and Modeling,' Proc of the ESSDERC, pp. 331-334, 2001
  9. H.Hillbrand and P.Russer,' An Efficient Method for Computer Aided Noise Analysis of Linear Amplifier Networks,' IEEE Trans. on Circuit and Systems vol. CAS-23, pp. 235-238, 1976
  10. J.P.Raskin, R.Gillon, J.Chen, D.V.Janiver, and J.P.Colinge, 'Accurate SOIMOSFET characte rization at Microwave Frequencies for Device Performance Optimization and Analog Modeling,' IIEEE Trans. Electron Devices, vol. 45, pp. 1017-1023, 1998 https://doi.org/10.1109/16.669514