In/Output Matching Network Based on Novel Harmonic Control Circuit for Design of High-Efficiency Power Amplifier

고효율 전력증폭기 설계를 위한 새로운 고조파 조절 회로 기반의 입출력 정합 회로

  • Choi, Jae-Won (Department of Information and Telecommunication Engineering, Soongsil University) ;
  • Seo, Chul-Hun (Department of Information and Telecommunication Engineering, Soongsil University)
  • 최재원 (숭실대학교 정보통신전자공학부) ;
  • 서철헌 (숭실대학교 정보통신전자공학부)
  • Published : 2009.02.25

Abstract

In this paper, a novel harmonic control circuit has been proposed for the design of high-efficiency power amplifier with Si LDMOSFET. The proposed harmonic control circuit haying the short impedances for the second- and third-harmonic components has been used to design the in/output matching network. The efficiency enhancement effect of the proposed harmonic control circuit is superior to the class-F or inverse class-F harmonic control circuit. Also, when the proposed harmonic control circuit has been adapted to the input matching network as well as the output matching network, the of ficiency enhancement effect of the proposed power amplifier has increased all the more. The measured maximum power added efficiency (PAE) of the proposed power amplifier is 82.68% at 1.71GHz band. Compared with class-F and inverse class-F amplifiers, the measured maximum PAE of the proposed power amplifier has increased in $5.08{\sim}9.91%$.

본 논문에서는 새로운 고조파 조절 회로를 이용한 Si LDMOSFET 고효율 전력증폭기를 구현하였다. 본 고조파 조절 회로는 2차, 3차 고조파 성분에 대하여 단락 임피던스를 갖으며, 입출력 정합 회로를 설계하기 위하여 사용된다. 제안된 고조파 조절 회로의 효율 개선 효과가 class-F 혹은 inverse class-F 고조파 조절 회로 보다 우수하다는 것을 증명하였다. 또한, 고조파 조절 회로가 출력 정합 회로뿐만 아니라, 입력 정합 회로에도 사용될 경우, 제안된 전력증폭기의 효율은 더욱 더 개선된다. 제안된 전력증폭기의 최대 전력 효율 (PAE)의 측정값은 1.71 GHz의 주파수 대역에서 82.68%이다. Class-F와 inverse class-F 전력증폭기와 비교할 때, 제안된 전력증폭기의 최대 PAE 측정값은 $5.08\;{\sim}\;9.91\;%$ 향상된다.

Keywords

References

  1. S. Gao, 'High-efficiency class-F RF/microwave power amplifiers,' IEEE Microwave Magazine, pp. 40-48, February 2006
  2. H. Park, G. Ahn, S. Jung, C. Park, W. Nah, B. Kim, and Y. Yang, 'High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors,' European Microwave Conference, pp. 184-187, September 2006
  3. S. C. Cripps, RF Power Amplifiers for Wireless Communications, Norwood, MA: Artech House, 1999
  4. F. Fortes and M. J. Rosario, 'A second harmon- ic class-F power amplifier in standard CMOS technology,' IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 6, pp. 1216- 1220, June 2001 https://doi.org/10.1109/22.925529
  5. A. Grebennikov, RF and Microwave Power Amplifier Design, New York: McGraw-Hill, 2004
  6. S. Gao, P. Butterworth, S. Ooi, and A. Sambell, 'High-efficiency power amplifier design including input harmonic termination,' IEEE Microwave and Wireless Components Letters, vol. 16, no. 2, pp. 81-83, February 2005 https://doi.org/10.1109/LMWC.2005.863171
  7. P. M. White, 'Effect of input harmonic terminations on high efficiency class-B and class-F operation of PHEMT devices,' IEEE MTT-S International Microwave Symposium, pp. 1611-1614, June 1998
  8. Y. Woo, Y. Yang, I. Kim, and B. Kim, 'Efficiency comparison between highly efficient class-F and inverse class-F power amplifiers,' IEEE Microwave Magazine, pp. 100-110, June 2007
  9. F. Lepine, A. Adahl, and H. Zirath, 'L-band LDMOS power amplifiers based on an inverse class-F architecture,' IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 6, pp. 2007-2012, June 2005 https://doi.org/10.1109/TMTT.2005.848830
  10. A. V. Grebennikov, 'Circuit design technique for high efficiency class F amplifiers,' IEEE MTT-S International Microwave Symposium, vol. 2, pp. 771-774, June 2000 https://doi.org/10.1109/MWSYM.2000.863295