DOI QR코드

DOI QR Code

Properties of MTiO3 (M = Sr, Ba) and PbM'O3(M'= Ti, Zr) Superlattice Thin Films Fabricated by Laser Ablation

  • Lim, T.M. (Department of Chemistry and Institute of Natural Basic Sciences, Wonkwang University) ;
  • Park, J.Y. (Department of Chemistry and Institute of Natural Basic Sciences, Wonkwang University) ;
  • Han, J.S. (Department of Chemistry and Institute of Natural Basic Sciences, Wonkwang University) ;
  • Hwang, P.G. (Department of Chemistry and Institute of Natural Basic Sciences, Wonkwang University) ;
  • Lee, K.H. (Nanoscale Science and Technology Institute, Wonkwang University) ;
  • Jung, K.W. (Department of Chemistry and Institute of Natural Basic Sciences, Wonkwang University) ;
  • Jung, D. (Department of Chemistry and Institute of Natural Basic Sciences, Wonkwang University)
  • 발행 : 2009.01.20

초록

$BaTiO_3/SrTiO_3$ and $PbTiO_3/PbZrO_3$ superlattice thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of $BaTiO_3/SrTiO_3$ superlattice thin film was higher than that of individual $BaTiO_3$ or $SrTiO_3$ film. Same result was obtained in the $PbTiO_3/PbZrO_3$system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.

키워드

참고문헌

  1. Jaffe, B.; Roth, R. S.; Marzullo, S. J. Appl. Phys. 1954, 25, 809 https://doi.org/10.1063/1.1721741
  2. Jaffe, B.; Roth, R. S.; Marzullo, S. J. Res. Natl. Bur. Stand. 1955, 55, 239 https://doi.org/10.6028/jres.055.028
  3. Hayashi, S.; Shibata, H.; Waku, S. J. Electron Commun. Soc. Jpn. 1975, 58C, 177
  4. Paz de Arauzo, C. A.; Cuchiaro, J. D.; McMillan, L. D.; Scott, J. F. Nature 1995, 374, 627 https://doi.org/10.1038/374627a0
  5. Al-Shareef, H. N.; Dimos, D.; Boyle, T. J.; Warren, W. L.; Tuttle, B. A. J. Appl. Phys. Lett. 1996, 68, 690 https://doi.org/10.1063/1.116593
  6. Dimos, D.; Al-Shareef, H. N.; Warren, W. L.; Tuttle, B. A. J. Appl. Phys. Lett. 1996, 80, 1682
  7. Moon, S.-Y.; Choi, K. S.; Jung, K. W.; Lee, H.; Jung, D. Bull. Korean Chem. Soc. 2002, 23, 1463 https://doi.org/10.5012/bkcs.2002.23.10.1463
  8. Tsurumi, T.; Ichijkawa, T.; Harigai, T.; Kakemoto, H.; Wada, S. Appl. Phys. 2002, 91, 2284 https://doi.org/10.1063/1.1433180
  9. LeMarrec, F.; Farhi, R.; El Marssi, M.; Delis, J. L.; Karkut, M. G. Phys. Rev. B 2000, 61, 6447 https://doi.org/10.1103/PhysRevB.61.R6447
  10. Wang, C. L.; Sin, Y.; Wang, S. X.; Zhong, W. L.; Zhang, P. L. Phys. Lett. A 2000, 268, 117 https://doi.org/10.1016/S0375-9601(00)00145-6
  11. Zhang, J.; Yin, Z.; Zhang, M. S. Thin. Sol. Films 2000, 375, 255 https://doi.org/10.1016/S0040-6090(00)01217-7
  12. LeMarrec, F.; Farhi, R.; Dkhil, B.; Chevreul, J.; Karkut, M. G. J. European Cer. Soc. 2001, 21, 1615 https://doi.org/10.1016/S0955-2219(01)00077-2
  13. Gong, J.; Kawasaki, M.; Fujito, K.; Tanaka, U.; Ishizawa, N.; Yoshimoto, M.; Koinuma, H.; Kumagai, M. Jpn. J. Appl. Phys. 1993, 32, L687 https://doi.org/10.1143/JJAP.32.L687
  14. Norton, M. G.; Cracknell, K. P. B.; Carter, C. B. J. Am. Ceram. Soc. 1992, 75, 1998
  15. Zhang, J.; Chen, Z. H.; Cui, D. F.; Lu, H. B.; Zhou, Y. L.; Li, L.; Yang, G. Z.; Jiang, N.; Hao, J. M. Appl. Phys. Lett. 1995, 66, 2069 https://doi.org/10.1063/1.113905
  16. Lee, M. B.; Kawasaki, M.; Yoshimoto, M.; Koinuma, H. Appl. Phys. Lett. 1995, 65, 1331 https://doi.org/10.1063/1.112042
  17. Pulsed Laser Deposition of Thin Film; Chrisey, D. B., Hubler, G. K., Eds.; Wiley: 1994
  18. Davis, M. F.; Grower, M. C. Appl. Phys. Lett. 1989, 55, 112 https://doi.org/10.1063/1.102393
  19. Chrisey, D. B.; Horwitz, J. S.; Grabowski, K. S. Mater. Res. Soc. Symp. Proc. 1990, 191, 25
  20. Saenger, K. L.; Roy, R. A.; Beach, D. B.; Etzold, K. F. Mater. Res. Soc. Symp. Proc. 1993, 285, 421
  21. Okada, T.; Nakata, Y.; Haibara, H.; Maeda, M. Jpn. J. Appl. Phys. 1995, 11B, 1536
  22. Mustofa, S.; Araki, T.; Furusawa, T.; Nishida, M.; Hino, T. Mater. Sci. Eng. 2003, B103, 128
  23. Nakata, Y.; Soumagne, G.; Okada, T.; Maeda, M. Appl. Surf. Sci. 1998, 127-129, 650
  24. Millon, E.; Perriere, J.; Defourneau, R. M.; Defourneau, D.; Albert, O.; Etchepare, J. Appl. Phys. Lett. 2003, A77, 73
  25. Tabata, H. Top Appl. Phys. 2005, 98, 161 https://doi.org/10.1007/978-3-540-31479-0_9
  26. Tsurumi, T.; Ichikawa, T.; Harigai, T.; Kakemoto, H.; Wada, S. J. Appl. Phys. 2002, 91, 2284 https://doi.org/10.1063/1.1433180
  27. Kim, J.; Kim, Y.; Kim, Y. S.; Lee, J.; Kim, L.; Jung, D. Appl. Phys. Lett. 2002, 80, 3581 https://doi.org/10.1063/1.1477934
  28. Kim, J. D.; Choi, K. S.; Yang, Y. S.; Jung, D. Bull. Kor. Chem. Soc. 2005, 26, 165 https://doi.org/10.5012/bkcs.2005.26.1.165
  29. Im, T. M.; Park, J. Y.; Kim, H. J.; Choi, H. K.; Jung, K. W.; Jung, D. Bull. Kor. Chem. Soc. 2008, 29, 427 https://doi.org/10.5012/bkcs.2008.29.2.427
  30. Kim, T. U.; Kim, B. R.; Lee, W. J.; Moon, J. H.; Lee, B. T.; Kim, J. H. J. Cryst. Growth 2006, 289, 540 https://doi.org/10.1016/j.jcrysgro.2005.11.119