Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thermal Stability Improvement of Ni-germanide using Ni-Co alloy for Ge-MOSFETs Technology

Ge-MOSFETs을 위한 Ni-Co 합금을 이용한 Ni-germanide의 열안정성 개선

  • 박기영 (충남대학교 전자공학과) ;
  • 정순연 (충남대학교 전자공학과) ;
  • 장잉이 (충남대학교 전자공학과) ;
  • 한인식 (충남대학교 전자공학과) ;
  • 이세광 (충남대학교 전자공학과) ;
  • 종준 (충남대학교 전자공학과) ;
  • 신홍식 (충남대학교 전자공학과) ;
  • 김영철 (한국기술교육대학교 신소재공학과) ;
  • 김재준 (한국기술교육대학교 신소재공학과) ;
  • 이가원 (충남대학교 전자공학과) ;
  • 왕진석 (충남대학교 전자공학과) ;
  • 이희덕 (충남대학교 전자공학과)
  • Published : 2008.08.01
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Abstract

In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed during post-germanidation annealing process. The thermal stability of Ni germanide using Ni-Co alloy is improved due to the less agglomeration of Germanide. Therefore, the proposed Ni-Co alloy is promising for highly thermal immune Ni germanide for nano scale Ge-MOSFETs technology.

Keywords

References

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