Information Display (인포메이션 디스플레이)

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Oxide Semiconductor TFT

  • Published : 2008.02.29
Download PDF
⟨ Previous Next ⟩

Abstract

Keywords

References

  1. A. P. Ramirez, 'Oxide Electronics Emerge', Science Vol. 35, 1377 (2007)
  2. K. Nomura et al., Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors', Nature VoL 432, 488, 2004 https://doi.org/10.1038/nature03090
  3. S. Masuda et al., 'Transparent thin film transistors using ZnO as an active channel layer and their electrical properties', J. Appl. Phys., Vol. 93, No.3 (2003)
  4. S.J. Pearton et al., 'Recent advances in processing of ZnO',J. Vac. Sci. Technol. B 22(3), 2004
  5. E. M. C. Fortunato et al., 'Wide-bandgap highmobility ZnO thin-film transistors produced at room temperature', Appl. Phys. Lett., Vol. 85,2541 (2004) https://doi.org/10.1063/1.1790587
  6. H. Q. Chiang et al., High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer', Appl. Phys. Lett. 86, 013503 (2005) https://doi.org/10.1063/1.1843286
  7. N. L. Dehuff et al., 'Transparent thin-film transistors with zinc indium oxide channel layer', J. Appl. Phys. 97, 064505 (2005) https://doi.org/10.1063/1.1862767
  8. W. B. Jackson et al., 'High-performance flexible zinc tin oxide field-effect transistors', Appl. Phys, Lett. 87, 193503 (2005) https://doi.org/10.1063/1.2120895
  9. D. K. Hwang et al., 'Improving Resistance to Gate Bias Stress in Pentacene TFTs with Optimally Cured Polymer Dielectric Layers', Journal of The Electrochemical Society, 153 (1) G23-G26 (2006) https://doi.org/10.1149/1.2126585
  10. P. F. Carcia et al., 'High-performance ZnO thinfilm transistors on gate dielectrics grown by atomic layer deposition', Appl. Phys. Lett. 88, 123509 (2006) https://doi.org/10.1063/1.2188379
  11. I. D. Kim et al., 'Room temperature fabricated ZnO thin film transistor using high-$\kappa$ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ gate insulator prepared by sputtering', Appl. Phys. Lett. 89, 022905 (2006) https://doi.org/10.1063/1.2220485
  12. H. H. Hsieh et al., 'Scaling behavior of ZnO transparent thin film transistors', Appl. Phys, Lett. 89, 041109 (2006) https://doi.org/10.1063/1.2235895
  13. H. Yabuta et al., 'High-mobility thin-film transistor with amorphous $InGaZnO_4$ channel fabricated by room temperature rf-rnagnetron sputtering", Appl. Phys. Lett. 89, 112123 (2006) https://doi.org/10.1063/1.2353811
  14. K. Lee et al., 'Low-voltage-driven top-gate ZnO thin-film transistors with polvmer/high-$\kappa$ oxide double-layer dielectric', Appl. Phys. Lett. 89, 133507 (2006) https://doi.org/10.1063/1.2357559
  15. M. Kim et al., 'High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper', Appl. Phys. Lett. 90, 212114 (2007) https://doi.org/10.1063/1.2742790
  16. M.- H. Cho et al., 'Dielectric characteristics of $Al_2O_3-HfO_2$ nanolaminates on Si(100)', Appl. Phys. Lett., 81, 1071 (2002) https://doi.org/10.1063/1.1499223
  17. H. Wong et al., 'Interface and oxide traps in high- $\kappa$ hafnium oxide films' /Thin Solid Films 462-463, 96-100 (2004) https://doi.org/10.1016/j.tsf.2004.05.031
  18. Ahn et al., 'Synthesis and analysis of Ag-doped ZnO', J. Appl. Phys. 100, 093701 (2006) https://doi.org/10.1063/1.2364041
  19. J S. Y. Lee et al., 'Variation of structural, electrical, and optical properties of $Zn_{1-x}Mg_xO$ thin films',J. Appl. Phys. (2006)
  20. S. Y. Lee et al., 'Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant', Appl. Phys Lett. (2006)
  21. 김한기, 이지변, '산화아연 반도체의 광전소자 응용을 위한 오믹 접합기술 개발통향' 전기전자재료학회지 Vol. 21, No.2., 15 (2008)
  22. 김일두, 홍재민, '저전압 구동 ZnO기반 플렉서블 박막 트랜지스터 소자기술' 전기전자재료학회지 Vol. 21, No.2., 27 (2008)
  23. 신선호, '차세대 디스플레이 선두주자-OLED', 전기전자재료학회지 Vol. 21, No.1., 05 (2008)