JSTS:Journal of Semiconductor Technology and Science

  • 제8권1호
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  • Pages.66-79
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  • 2008
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M. (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology) ;
  • Dong, R. (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology) ;
  • Lee, D.S. (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology) ;
  • Seong, D.J. (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology) ;
  • Choi, H.J. (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology) ;
  • Pyun, M.B. (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology) ;
  • Hwang, H. (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology)
  • 발행 : 2008.03.30
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초록

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

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피인용 문헌

  1. Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices vol.58, pp.10, 2011, https://doi.org/10.1109/TED.2011.2162518
  2. Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells vol.59, pp.9, 2012, https://doi.org/10.1109/TED.2012.2202237
  3. Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells vol.13, pp.1, 2013, https://doi.org/10.1109/TDMR.2012.2237404
  4. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides vol.2015, pp.1687-8124, 2015, https://doi.org/10.1155/2015/654840
  5. Molybdenum oxide-base phase change resistive switching material vol.111, pp.16, 2017, https://doi.org/10.1063/1.5000410