JSTS:Journal of Semiconductor Technology and Science

  • 제8권1호
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  • Pages.1-10
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  • 2008
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory

  • 발행 : 2008.03.30
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초록

The present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.

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참고문헌

  1. M. Gill, T. Lowrey, and J. Park, ISSCC Dig. Tech. Papers, p. 202, 2002
  2. J.H. Oh, J.H. Park, Y.S. Lim, H.S. Lim, Y.T. Oh, J.S. Kim, J.M. Shin, J.H. Park, Y.J. Song, K.C. Ryoo, D.W. Lim, S.S. Park, J.I. Kim, J.H. Kim, J. Yu, F. Yeung, C.W. Jeong, J.H. Kong, D.H. Kang, G.H. Koh, G.T. Jeong, H.S. Jeong, and Kinam Kim, IEDM Tech. Dig., p. 1, 2006
  3. Y.J. Song, J.H. Park, S.Y. Lee, J.-H. Park, Y.N. Hwang, S.H. Lee, K.C. Ryoo, S.J. Ahn, C.W. Jeong, J.M. Shin, W.C. Jeong, K.H. Koh, G.T. Jeong, H.S. Jeong, and K.N. Kim, ESSDERC, p. 513, 2005
  4. A. Pirovano, F. Pellizzer, A. Redaelli, I. Tortorelli , E. Varesi, F. Ottogalli, M. Tosi, P. Besana, R. Cecchini, R. Piva, M. Magistretti, M. Scaravaggi, G. Mazzone, P. Petruzza, F. Bedeschi, T. Marangon, A. Modelli, D. Ielmini, A.L. Lacaita, and R. Bez, ESSDERC, p. 313, 2005
  5. A. Pirovano, F. Pellizzer, I. Tortorelli, R. Harrigan, M. Magistretti, P. Petruzza, E. Varesi, D. Erbetta, T. Marangon, F. Bedeschi, R. Fackenthal, G. Atwood, and R. Bez, ESSDERC, p. 222, 2007
  6. S.L. Cho, J.H. Yi, Y.H. Ha, B.J. Kuh, C.M. Lee, J.H. Park, S.D. Nam, H. Horii, B.O. Cho, K.C. Ryoo, S.O. Park, H.S. Kim, U-In. Chung, J.T. Moon, and B.I. Ryu, Symposium on VLSI technology, p. 96, 2005
  7. J.I. Lee, H. Park, S.L. Cho, Y.L. Park, B.J. Bae, J.H. Park, J.S. Park, H.G. An, J.S. Bae, D.H. Ahn, Y.T. Kim, H. Horii, S.A. Song, J.C. Shin, S.O. Park, H.S. Kim, U-In. Chung, J.T. Moon, and B.I. Ryu, Symposium on VLSI technology, p. 102, 2007
  8. S.H. Lee, Y. Jung, R. Agarwal, Nature Nanotechnol., vol. 2, p. 626, 2007 https://doi.org/10.1038/nnano.2007.291
  9. S.R. Ovshinsky, Tutorials in MRS Fall Meeting, 2003
  10. F. Rao, Z. Song, M. Zhong, L. Wu, G. Feng, B. Liu, S. Feng, and B. Chen, Jpn. J. Appl. Phys., vol. 46, p. L25, 2007 https://doi.org/10.1143/JJAP.46.L25
  11. T. Nirschl, J.B. Philipp, T.D. Happ, G.W. Burr, B. Rajendran, M.-H. Lee, A. Schrott, M. Yang, M. Breitwisch, C.-F. Chen, E. Joseph, M. Lamorey, R. Cheek, S.-H. Chen, S. Zaidi, S. Raoux, Y.C. Chen, Y. Zhu, R. Bergmann, H.-L. Lung, and C. Lam, IEDM Tech. Dig., p. 461, 2007
  12. S. Lee, J.-h. Jeong, T.S. Lee, W.M. Kim, and B. Cheong, unpublished work
  13. N. Takaura, M. Terao, K. Kurotsuchi, T. Yamauchi, O. Tonomura, Y. Hanaoka, R. Takemura, K. Osada, T. Kawahara, and H. Matsuoka, IEDM Tech. Dig., p. 897, 2003
  14. S.J. Ahn, Y.J. Song, C.W. Jeong, J.M. Shin, Y. Fai, Y.N. Hwang, S.H. Lee, K.C. Ryoo, S.Y. Lee, J.H. Park, H. Horii, Y.H. Ha, J.H. Yi, B.J. Kuh, G.H. Koh, G.T. Jeong, H.S. Jeong, K. Kim, and B.I. Ryu, IEDM Tech. Dig., p. 907, 2004
  15. Y. Matsui, K. Kurotsuchi, O. Tonomura, T. Morikawa, M. Kinoshita, Y. Fujisaki, N. Matsuzaki, S. Hanzawa, M. Terao, N. Takaura, H. Moriya, T. Iwasaki, M. Moniwa, and T. Koga, IEDM Tech Dig., p. 346908.1-4, 2006
  16. S. Kang, W.Y. Cho, B.-H. Cho, K.-J. Lee, C.-S. Lee, H.-R. Oh, B.-G. Choi, Q. Wang, H.-J. Kim, M.-H. Park, Y.H. Ro, S. Kim, C.-D. Ha, K.-S. Kim, Y.-R. Kim, D.-E. Kim, C.-K. Kwak, H.-G. Byun, G. Jeong, H. Jeong, and K. Kim, IEEE J. Solid-State Circuits, vol. 42, p. 210, 2007 https://doi.org/10.1109/JSSC.2006.888349
  17. M.H.R. Lankhorst, B.W.S.M.M. Ketelaars, and R.A.M. Wolters, Nature Mater., vol. 4, no. 1, 2005
  18. B. Cheong, J.-h. Jeong, S. Lee, I.H. Kim, W. Zhe, H.W. Ahn, S.C. Kim, H.S. Lee, and Y.W. Park, 'Characteristics of Phase Change Memory Devices based on Ge-doped SbTe and its derivative', European Phase Change and Ovonics Symposium (E*PCOS), 2007
  19. Y.C. Chen, C.T. Rettner, S. Raoux, G.W. Burr, S.H. Chen, R.M. Shelby, M. Salinga, W.P. Risk, T.D. Happ, G.M. McClelland, M. Breitwisch, A. Schrott, J.B. Philipp, M.H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C.F. Chen, E. Joseph, S. Zaidi, B. Yee, H.L. Lung, R. Bergmann, and C. Lam, IEDM Tech Dig., p. 346910.1-4, 2006
  20. K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, Jpn. J. Appl. Phys., vol. 42, p. 404, 2003 https://doi.org/10.1143/JJAP.42.404
  21. H.J. Borg, M. Schijndel, J.C.N. Rijpers, M.H.R. Lankhorst, G. Zhou, M.J. Dekker, I.P.D. Ubbens, and M. Kuijper, Jpn J. Appl. Phys. I, vol. 40, p. 1592, 2001 https://doi.org/10.1143/JJAP.40.1592
  22. M.H.R. Lankhorst, L. Pieterson, M. Schijndel, B.A.J. Jacobs, and J.C.N. Rijpers, Jpn J. Appl. Phys. I, vol. 42, p. 863, 2003 https://doi.org/10.1143/JJAP.42.863
  23. K. Attenborough, 'Novel cell concept for phase change random access memory', MRS Spring Meeting, San Francisco, CA, USA, April 9-13, 2007
  24. K. Nakayama, K. Kojima, F. Hayakawa, Y. Imai, A. Kitagawa, and M. Suzuki, Jpn J. Appl. Phys., vol. 39, p. 6157, 2000 https://doi.org/10.1143/JJAP.39.6157
  25. C.J. van der Poel, D.J. Gravesteijn, W.G.V.M. Rippens, H.T.L.P. Stockx, and C.M.J. van Uijen, J. Appl. Phys., vol. 59, p. 1819, 1986 https://doi.org/10.1063/1.337027

피인용 문헌

  1. Nanoscale memory devices vol.21, pp.41, 2010, https://doi.org/10.1088/0957-4484/21/41/412001