한국재료학회지 (Korean Journal of Materials Research)

  • 제17권9호
  • /
  • Pages.469-474
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  • 2007
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  • 1225-0562(pISSN)
  • /
  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
권호 표지
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Self assembled-monolayer(SAM)법을 이용한 TaN 확산방지막의 무전해 Cu 도금용 Pd seed layer 제조 및 특성

Pd Seed Layer for Electroless Cu Deposition on TaN Diffusion Barrier by Self-Assembled-Monolayer Method(SAM)

  • Han, Won-Kyu (Division of Materials Science and Engineering, Hanyang University) ;
  • Cho, Jin-Ki (Department of advanced Materials Engineering, Korea Polytechnic University) ;
  • Choi, Jae-Woong (Division of Materials Science and Engineering, Hanyang University) ;
  • Kim, Jeong-Tae (R&D Divisions, Hynix Semiconductor Inc.) ;
  • Yeom, Seung-Jin (R&D Divisions, Hynix Semiconductor Inc.) ;
  • Kwak, Noh-Jung (R&D Divisions, Hynix Semiconductor Inc.) ;
  • Kim, Jin-Woong (R&D Divisions, Hynix Semiconductor Inc.) ;
  • Kang, Sung-Goon (Division of Materials Science and Engineering, Hanyang University)
  • 발행 : 2007.09.27
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초록

Electroless deposition(ELD) was applied to fabricate Cu interconnections on a TaN diffusion barrier with Pd seed layer. The Pd seed layer was obtained by self-assembled monolayer method(SAM) with PDDA and PSS as surfactants. We were able to obtain about 10nm Pd nano particles as seeds for electroless Cu deposition and the density of Pd seeds was much higher than that of Pd seeds fabricated by conventional Pd sensitization-activation method. Also we were able to obtain finer Cu interconnections by ELD. Therefore we concluded that the Pd seed layer by SAM was able to be applied to form Cu interconnection by ELD for under 30nm feature.

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참고문헌

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