Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dependency of the Device Characteristics on Plasma Nitrided Oxide for Nano-scale PMOSFET

Nano-scale PMOSFET에서 Plasma Nitrided Oixde에 대한 소자 특성의 의존성

  • 한인식 (충남대학교 전자전파정보통신공학과) ;
  • 지희환 (매그나칩 반도체) ;
  • 구태규 (충남대학교 전자전파정보통신공학과) ;
  • 유욱상 (충남대학교 전자전파정보통신공학과) ;
  • 최원호 (충남대학교 전자전파정보통신공학과) ;
  • 박성형 (매그나칩 반도체) ;
  • 이희승 (매그나칩 반도체) ;
  • 강영석 (매그나칩 반도체) ;
  • 김대병 (매그나칩 반도체) ;
  • 이희덕 (충남대학교 전자전파정보통신공학과)
  • Published : 2007.07.01
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Abstract

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

Keywords

References

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