• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.569-574
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• 2007

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.944-948
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• 2011

In this paper, flicker noise characteristic and channel hot carrier degradation of NMOSFETs with plasma nitrided oixde (PNO) and thermally nitrided oxide (TNO) are analyzed in depth. Compared with NMOSFET with TNO, flicker noise characteristic of NMOSFET with PNO is improved significantly because nitrogen density in PNO near the Si/$SiO_2$ interface is less than that in TNO. However, device degradation of NMOSFET with PNO by channel hot carrier stress is greater than that with TNO although PMOSFET with PNO showed greater immunity to NBTI degradation than that with TNO in previous study. Therefore, concurrent investigation of the reliability as well as low frequency noise characteristics of NMOSFET and PMOSFET is required for the development of high performance analog MOSFET technology.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.391-400
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• 2002

Corrosion characteristics of Ti, Ti/Cr coated and plasma-nitrided surface for stainless steel containing Ti have been studied. Stainless steels containing 0.09-0.92wt% Ti were fabricated by using vacuum furnace and solutionized for 1hr at 105$0^{\circ}C$. Ti and Cr coatings were done on solutionized stainless steel surface by EB-PVD. The Ti coated specimen were coated by Cr and were nitrided by plasma at $450^{\circ}C$ for 5hr. Microstructure and phase analysis were performed using SEM, OM and EDX. Corrosion behavior of the coated specimen was investigated by electrochemical test. The coated surface was of fine columnar structure. The Ti/Cr coated surface was denser than the Ti coated and the Ti coated-nitrided surfaces. The corrosion and pitting potential increased in proportion to the Ti content, coating temperature, coating thickness and formation of stable oxide film. The current density in active and passive region decreased in the case of Ti/Cr coated sample and Ti coated-nitrided samples. Especially the plasma nitrided specimen after Ti coating have a good corrosion resistance compared with the Ti coated specimen. The number and size of pits decreased as Ti content of matrix increased.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.89-98
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• 2003

Corrosion characteristics of Ti, Ti/Cr coated and plasma-nitrided surface for stainless steel containing Ti have been studied. Stainless steels containing 0.09-0.92wt% Ti were fabricated by using vacuum furnace and solutionized for 1hr at $1050^{\circ}C$. Ti and Cr coatings were done on solutionized stainless steel surface by EB-PVD. The Ti coated specimen were coated by Cr and were nitrided by plasma at $450^{\circ}C$ for 5hr Microstructure and phase analysis were performed using SEM, OM and EDX. Corrosion behavior of the coated specimen was investigated by electrochemical test. The coated surface was of fine columnar structure. The Ti/Cr coated surface was denser than the Ti coated and the Ti coated-nitrided surfaces. The corrosion and pitting potential increased in proportion to the Ti content, coating temperature, coating thickness and formation of stable oxide film. The current density in active and passive region decreased in the case of Ti/Cr coated sample and Ti coated-nitrided samples. Especially the plasma nitrided specimen after Ti coating have a good corrosion resistance compared with the Ti coated specimen. The number and size of pits decreased as Ti content of matrix increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.48-51
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• 2004

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.189-192
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• 1988

Nitrided oxides have been investigated recently for application as a replacement for thermally grown $SiO_2$ in MIS devices. In this paper, thin oxides were nitrided in $N_2$ Plasma ambient. With the measurement of the equivalent paralled conductance and capacitance by the using coductance technique, the characterization of Si-SiON interface is developed. The interface state density of Si-SiON is obtained by $1{\times}10^{11}{\sim}9{\times}10^{11}(eV^{-1}Cm^{-2})$. After${\pm}$B-T stress is performed on the sample, the interface state density gets increased.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.383-385
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• 1989

Nitrided oxides have been recently investigated for the application as a replacement of thermally grown $SiO_2$in the MIS devices. In this paper, thin oxides were nitrided in the $N_2$plasma ambient. After B - T stress is performed on the sample, it was noticed that the current density is increased. From the I - V measurement, dominant conduction mechanism of oxynitride films appeared to be Fowler - Nordheim emission. And also its breakdown strength is increased about 2.2 MV/cm compared with the oxide films.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.2
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• pp.81-88
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• 2001

The effects of post-oxidation and sulfnitriding treatments on the phase transformation in the nitrided case of tool steels have been studied. Dense and compact $Fe_3O_4$ layer was formed at the outer surface of nitride compound layer by post-oxidation treatment and multi layer of iron sulfide(FeS) was formed in the compound layer by sulfnitriding treatment. The surface hardness decreased because of formation of the soft oxide or sulfide at the nitride surface. Diffusion layer of nitride case was not affected by post-oxidation treatment or sulfnitriding treatment of nitrided alloy tool steels.

• Korean Journal of Materials Research
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• v.33 no.7
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• pp.309-314
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• 2023

This study aimed to address the limitations of traditional plasma nitriding methods by implementing a short-term plasma oxy-nitriding treatment on the surface of AISI 420 martensitic stainless steel. This treatment involved the sequential formation of nitride and oxide layers, to enhance surface hardness and corrosion resistance, respectively. The process resulted in the formation of a 20 ㎛-thick nitride layer and a 3 ㎛-thick oxide layer on the steel surface. Initially, the hardness increased by 2.2 times after nitriding, followed by a subsequent decrease of approximately 31 % after oxidation. While the nitriding process reduced corrosion resistance, the subsequent oxidation process led to the formation of a passive oxide film, effectively resolving this issue. The pitting corrosion of the oxide passive film started at 82.6 mVssc, providing better corrosion resistance characteristics than the nitride layer. Consequently, the trade-off between surface hardness and corrosion resistance in plasma oxy-nitrided AISI 420 martensitic stainless steel is anticipated to be recognized as an innovative and comprehensive surface treatment process for biomedical components.