MOSFET 병렬 구동을 이용한 대용량 정류기 구현

Design of High Capacity Rectifier by Parallel Driving of MOSFET

  • 선덕한 (경북대학교 전자전기공학부 대학원) ;
  • 조내수 (경북대학교 전자전기공학부 대학원) ;
  • 김우현 (영남이공대학 로보테크과)
  • Sun, Duk-Han (School of Electronic & Electrical Engineering, Kyungpook National University) ;
  • Cho, Nae-Su (School of Electronic & Electrical Engineering, Kyungpook National University) ;
  • Kim, Woo-Hyun (Department of Robotech Engineering Yeungnam College of Science & Technology)
  • 투고 : 2007.08.24
  • 심사 : 2007.11.23
  • 발행 : 2007.11.30

초록

In case of design of a rectifier to supply high current, To select switching frequency of semiconductor switches affect absolutely the design of the LC filter value in an power conversion circuit. The conventional rectifier by using MOSFET is no use in high current equipments because of small drain-source current. To solve this problem, this paper proposes to design of high capacity rectifier by parallel driving of MOSFET in the single half bridge DC-DC converter. This method can be able to develop high current rectifier by distributed drain-source current. The proposed scheme is able to expect a decrease in size, weight and cost of production by decreasing the LC filter value and increasing maximumly the switching frequency. The validity of the proposed parallel driving strategy is verified through computer-aided simulations and experimental results.

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