Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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IR Absorption Property in Nano-thick Nickel Silicides

나노급 두께 니켈실리사이드의 적외선 흡수 특성

  • Yoon, Ki-Jeong (Department of Materials Science and Engineering, University of Seoul) ;
  • Han, Jeung-Jo (Department of Materials Science and Engineering, University of Seoul) ;
  • Song, Oh-Sung (Department of Materials Science and Engineering, University of Seoul)
  • 윤기정 (서울시립대학교 신소재공학과) ;
  • 한정조 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과)
  • Published : 2007.06.27
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Abstract

We fabricated thermaly evaporated 10 nmNi/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated $10{\sim}50$ nm-thick ITO/Si films with a rf-sputter as reference films. A four-point tester was used to investigate the sheet resistance. A transmission electron microscope (TEM) and an X-ray diffractometer were used for the determination of cross sectional microstructure and phase changes. A UV-VISNIR and FT-IR (Fourier transform infrared rays spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed $20{\sim}70nm-thick$ silicide layers formed on the single and polycrystalline silicon substrates. Nickel silicides and ITO films on the single silicon substrates showed almost similar absorbance in near-IR region, while nickel silicides on polycrystalline silicon substrate showed superior absorbance above 850 nm near-IR region to ITO films. Nickel silicide on polycrystalline substrate also showed better absorbance in middle IR region than ITO. Our result implies that nano-thick nickel silicides may have exellent absorbing capacity in near-IR and middle-IR region.

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