Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Study on the Generation of Leakage Current by the Fourier Transform Infrared Analysis

푸리에변환 적외선분광분석법에 의한 누설전류의 발생 원인에 대한 연구

  • Published : 2007.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

The surfaces of $SiO_2$ films were treated by PMMA diluted solutions, and analyzed the chemical shift from Fourier Transform Infrared Spectrometer. The $SiO_2$ film treated by PMMA diluted solution changed the properties of the surface, and showed the blue and red shift according to the concentration of PMMA. The C-H bond elongation effect due to the high electro-negative atom chlorine showed the red shift, and makes the final material with the cross-link structure. The leakage current was efficiently reduced at the sample No 7 with the red shift, witch depends on the electron deficient group.

Keywords

References

  1. T. Oh, 'Organic thin film transistors using pentacene and SiOC film', IEEE transactions on Nanotechnology, Vol. 5, p. 23, 2006 https://doi.org/10.1109/TNANO.2005.858591
  2. M. J. Kellicutt, I. S. Suzuki, C. R. Burr, M. Suzuki, M. Ohashi, and M. S. Whittingham, 'V ariahle-range- hopping conduction and the Pool-Frankel effect in a copper polyaniline vermiculite intercalation compound', Physical Review B., Vol. 47, No. 20, p. 13664, 1993 https://doi.org/10.1103/PhysRevB.47.13664
  3. P. W. May, S. Hohn, W. N. Wang, and N. A Fox, 'Field emission conduction mechanisms in chemical vapor deposited diamond and diamondlike carbon films', Appl. Phys. Lett., Vol. 27, p. 2182, 1998
  4. I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, 'High-performance bottom electrode organic thin-film transistors', IEEE Transactions on Electron Devices, Vol. 48, p. 1060, 2001 https://doi.org/10.1109/16.925226
  5. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, 'Pentacene organic thin-film transistors-molecular ordering and mobility', IEEE Electron Device Letters, Vol. 18, p. 87, 1997 https://doi.org/10.1109/55.556089
  6. 강만구, 김종대, '플렉시블 염료감응 대양전지기술', 전기전자재료, 19권, 7호, p. 39, 2006
  7. T. Oh and H. B. Kim, 'Pentacene thin film trasnsistors on PMMA treated $Si0_2$', Transactions on Electrical and Electronic Materials, Vol. 7, No.7, p. 639, 2006
  8. 김덕규, 유인성, 박준배, '플라즈마 조건 변화에 따른 ITO, 특성 분석 및 유기발광소자의 제작에 관한 연구', 전기전자재료학회논문지, 18권, 10호, p.945, 2005
  9. P. Masri, 'Silicon carbide and silicon carbidebased structures: The physics of epitaxy', Surface science reports, Vol. 48, p. 1, 2002 https://doi.org/10.1016/S0167-5729(02)00099-7
  10. A. Grill and D. A. Neumayer, 'Structure of low dielectric constant to extreme low dielectric constant S10CH films: Fourier transform infrared spectroscopy characterization' J Appl. Phys., Vol. 94, p. 6697, 2003 https://doi.org/10.1063/1.1618358
  11. J Y. Kim, M. S. Hwang, Y.-H. Kim, H. J Kim, and Y. Lee, 'Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition', J Appl. Phys., Vol. 90, p. 2469, 2001 https://doi.org/10.1063/1.1388861
  12. J-H. Yun, E.-S. Choi, C.-M. jang, and C.-S. Lee, 'Effect of post-treatments on atomic layer deposition of TiN thin films using tetrakis (dimethylarnido) titanium and ammonia', Jpn. J Appl, Phys., Vol. 41, p. L418, 2002 https://doi.org/10.1143/JJAP.41.L418
  13. J R. Kalnin and E. Kotomin, 'Modified maxwell-garnett equation for the effective transport coefficients in inhomogeneous media', J Phys. A:Math. Gen., Vol. 31, p. 7227, 1998 https://doi.org/10.1088/0305-4470/31/35/004
  14. P. R. Emtage and W. Tantraporn, 'Schottky emission through thin inslulating films', Physical Review letters, Vol. 8, No.7, p. 267, 1962
  15. J G. Simmons, 'Pools-frenkel effect and schottky in metal-insuloror-metal systems', Physial Review, Vol. 155, p. 657, 1967 https://doi.org/10.1103/PhysRev.155.657
  16. C. A. Mead, 'Electron transport mechanism in thin insulating films', Physical Review, Vol. 128, p. 2088, 1962
  17. G. Galli and R. M. Martin, 'Structural and electronic properties of amorphous carbon', Phys. Rev. Lett., Vol. 62, No.5, p. 555, 1989 https://doi.org/10.1103/PhysRevLett.62.555
  18. M. A. Tamor and C. H. Wu, 'Graphitic network models of diamondlike carbon', J. Appl. Phys., Vol. 67, p. 1007, 1990 https://doi.org/10.1063/1.345808
  19. J. Frenkel, 'On pre-breakdown phenomena in insulators and electronic semiconductors', Phys, Rev., Vol. 54, p. 647, 1938 https://doi.org/10.1103/PhysRev.54.647
  20. T. Oh, 'Generation of bonding structure due to organic carbon and organometallic carbon as a function of Gas source', Jpn. J. Appl, Phys., Vol 44, p. 4103, 200 https://doi.org/10.1143/JJAP.44.4103
  21. T. C. Chang, P. T. Liu, Y. S. Mar, S. M. Sze, Y. L. Yang, M. S. Feng, F. M. Pan, B. T. Dai, and C. Y. Chang, 'The novel improvement of low dielectric constant methylsilsesquioxane by $N_2O$ plasma treatment', J. Electrochem. Soc., Vol 146, p. 3802, 1999 https://doi.org/10.1149/1.1392554