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The Properties of HfO2 Thin Films by DC/RF Magnetron Sputtering and Thermal Evaporation Method

  • Jeong, Woon-Jo (Optical Engineering Research Institute, Mokpo National University) ;
  • Ahn, Ho-Geun (Department of Chemical Engineering, Sunchon National University) ;
  • Kim, Young-Jun (Department of Electrical Engineering, Mokpo National University) ;
  • Yang, Hyeon-Hun (Department of Electrical Engineering, Mokpo National University) ;
  • Park, Gye-Choon (Department of Electrical Engineering, Mokpo National University)
  • 발행 : 2007.04.01

초록

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

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참고문헌

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피인용 문헌

  1. Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation vol.2013, 2013, https://doi.org/10.1155/2013/568904