Transactions on Electrical and Electronic Materials

  • 제8권2호
  • /
  • Pages.84-88
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  • 2007
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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The Structural and Electrical Properties of Bismuth-based Pyrochlore Thin Films for embedded Capacitor Applications

  • Ahn, Kyeong-Chan (Department of Nano information Systems Engineering, Chungnam National University) ;
  • Park, Jong-Hyun (Department of Nano information Systems Engineering, Chungnam National University) ;
  • Ahn, Jun-Ku (Department of Nano information Systems Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Nano information Systems Engineering, Chungnam National University)
  • 발행 : 2007.04.01
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초록

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

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참고문헌

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