Transactions on Electrical and Electronic Materials

  • 제8권2호
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  • Pages.79-83
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  • 2007
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Physics of the Coefficient of Friction in CMP

  • 발행 : 2007.04.01
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초록

The implications of a theory of lubricated pad asperity wafer contact are traced through several fundamental areas of chemical-mechanical polishing. The hypothesized existence of a nanolubrication layer underlies a high accuracy model of polish rates. It also provides a quantitative explanation of a power law relationship between the coefficient of friction and a measure of pad surface flattening. The theory may further be useful for interpreting friction changes during polishing, and may explain why the coefficient of friction is sometimes observed to have a temperature or velocity dependence.

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참고문헌

  1. F. Preston, J. of the Society. of Glass Technology, Vol. 11, p. 214, 1927
  2. S. R. Runnels, J. Electrochem. Soc., Vol. 141, No.7, p. 1900, 1994 https://doi.org/10.1149/1.2055048
  3. J. Sorooshian, L. Borucki, D. Stein. R. Timon, D. Hetherington, and A. Philipossian, Trans. ASME J. Tribology, Vol. 127, No.3, p. 639, 2005 https://doi.org/10.1115/1.1866168
  4. L. Borucki, J. Sorooshian, Z. Li, Y. Sampurno, Y. Zhuang, and A. Philipossian, Proc. 9th International CMP-MIC, Fremont, CA, p. 168,2005
  5. L. Borucki, D. Rosales-Yeomans, and A. Philipossian, Proc. 10th CAMP CMP Symposium, Lake Placid, NY, 2005
  6. Y. Sampurno, L. Borucki, and A. Philipossian, J. Electrochem. Soc., Vol. 152, No. 11,2005
  7. G. P. Muldowney, Proc. Pac RIM-CMP Conference, Tokyo, Japan,p. 33,2004
  8. S. Gold and V. A. Burrows, Electrochem. and Solid State Letters, Vol. 7, No. 12, p. G295, 2004 https://doi.org/10.1149/1.1809555
  9. L. J. Borucki, T. Witelski, C. P. Please, P. R. Kramer, and D. Schwendeman, J. Engineering Mathematics, Vol. 50, p. 1,2004 https://doi.org/10.1023/B:ENGI.0000042116.09084.00
  10. L. Borucki, H. Lee, Y. Zhuang, and A. Philipossian, Proc. AIChE Annual Meeting, Austin TX, 2004
  11. J. Luo and D. Dornfeld, IEEE Trans. on Semiconductor Manufacturing, Vol. 14, No.2, p. 112,2001
  12. X. Xia and G. Ahmadi, Particulate Science and Technology, Vol. 20, No.3, p. 187
  13. C. Zhou, L. Shan. J. R. Hight, S.-H. Ng, and S. Danyluk, Mat. Res. Soc. Symp. Proc., Materials Research Society, San Francisco, CA, Vol. 671, p. M1.6.1, 2001
  14. S.-H. Ng, doctoral dissertation, Georgia Institute of Technology, Atlanta, GA, 2004
  15. A. Z. Szeri, Fluid Film Lubrication Theory and Design, Cambridge U. Press, Ch. 8, 1998
  16. G. Muldowney, C. L. Elmufdi, and R. Palaparthi, Proc. 10th CAMP CMP Symposium, Lake Placid, NY, 2005
  17. K. L. Johnson, Contact Mechanics, Cambridge U. Press, 1985
  18. B. J. Hamrock and D. Dowson, Trans. ASME J. Lubrication Technology, Vol. 100, p. 236, 1978
  19. L. Borucki, L. Chams, and A. Philipossian, J. of the Electrochemical Soc., Vol. 151, No. 12, p. G809, 2004 https://doi.org/10.1149/1.1808635
  20. Z. Li, doctoral dissertation, the University of Arizona, Tucson, AZ, 2005
  21. P. A. Thompson, G. S. Grest, and M. O. Robbins, 'Phase transitions and universal dynamics in confined films,' Phys. Rev. Lett., Vol. 68, p. 3448, 1992 https://doi.org/10.1103/PhysRevLett.68.1992

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