한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제20권3호
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  • Pages.202-206
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  • 2007
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Defect Analysis via Photoluminescence of p-type ZnO:N Thin Film fabricated by RF Magnetron Sputtering

  • Jin, Hu-Jie (School of Electrical Electronic and Information Engineering, Wonkwang University) ;
  • So, Soon-Jin (Knowledge*On Inc.) ;
  • Park, Choon-Bae (School of Electrical Electronic and Information Engineering, Wonkwang University)
  • 발행 : 2007.03.01
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초록

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

키워드

참고문헌

  1. S. J. So and C. B. Park, 'Diffusion of phosphorus and arsenic using ampoule-tube method on undoped ZnO thin films and electrical and optical properties of p-type ZnO thin films', J. Crystal Growth, Vol. 285, No.4, p, 606, 2005 https://doi.org/10.1016/j.jcrysgro.2005.09.018
  2. J. G. Lu, Z. Z. Ye, F. Zhuge, Y. J. Zeng, B. H. Zhao, and L. P. Zhu, 'P-type conduction in N-Al co-doped ZnO thin films', Appl. Phys. Lett., Vol. 85, No. 15, p. 3134, 2004 https://doi.org/10.1063/1.1803935
  3. M. S. Oh, S. H. Kim, S. J. Park, and T. Y. Seong, 'Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition', Superlattices and Microstructures, Vol. 39, No. 1-4, p. 130, 2006 https://doi.org/10.1016/j.spmi.2005.08.068
  4. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, 'Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO', Nat. Materials, Vol. 4, No. 1, p. 42, 2004 https://doi.org/10.1038/nmat1284
  5. A. V. Singh, R. M. Mehra, A. Wakahara, and A. Yoshida, 'P-type conduction in codoped ZnO thin films', J. Appl. Phys., Vol. 93, No.1, p. 396, 2003 https://doi.org/10.1063/1.1527210
  6. M. Sanmyo, Y. Tomita, and K. Kobayashi, 'Preparation of zinc oxide films containing Be and N atoms by radio frequency magnetron sputtering', Thin Solid films, Vol. 472, No. 1-2, p. 189, 2005 https://doi.org/10.1016/j.tsf.2004.06.197
  7. C. H. Park, S. B. Zhang, and S. H. Wei, 'Origin of p-type doping difficulty in ZnO: The impurity perspective', Phy. Rev. B, Vol. 66, No.7, p. 073202, 2002 https://doi.org/10.1103/PhysRevB.66.073202
  8. A. Kobayashi, O. F. Sankey, and J. D. Dow, 'Deep energy levels of defects in the wurtzite semiconductors AlN, CdS, CdSe, ZnS, and ZnO', Phy, Rev. B, Vol. 28, No.2, p. 946, 1983 https://doi.org/10.1103/PhysRevB.28.946
  9. B. Yao, L. X. Guanb, G. Z. Xingb, Z. Z. Zhanga, B. H. Lia, Z. P. Weia, X. H. Wanga, C. X. Congb, Y. P. Xieb, Y. M. Lua, and D. Z. Shena, 'P'-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering', To be published in J. Luminescence
  10. S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmidt, M. Schubert, M. Lorenz, and M. Grundmann, 'Low temperature photolumin escence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon', Thin Solid Films, Vol. 496, No. 2, p. 234, 2006 https://doi.org/10.1016/j.tsf.2005.08.305
  11. H. M. Zhang, Y. Cui, Y. G. Men, and X. S. Liu, 'Strong ultraviolet emission from zinc oxide thin films prepared by electrophoretic deposition', J. Lumicescence, Vol. 121, No. 2, p. 601, 2006 https://doi.org/10.1016/j.jlumin.2005.12.056
  12. X. M. Fan, J. S. Lian, Z. X. Guo, and H. J. Lu, 'Microstructure and photoluminescence properties of ZnO thin films grown by PLD on Si(111) substrates', Appl. Surf. Science, Vol. 239, No.2, p. 176, 2005 https://doi.org/10.1016/j.apsusc.2004.05.144
  13. E. S. Shim, H. S. Kang, S. S. Pang, J. S. Kang, I. Yun, and S. Y. Lee, 'Annealing effect on the structural and optical properties of ZnO thin film on InP', Mat. Sci. and Eng. B, Vol. 102, No. 1-3, p. 366, 2003 https://doi.org/10.1016/S0921-5107(02)00622-0
  14. D. Kim, T. Shimomura, S. Wakaiki, T. Terashita, and M. Nakayama, 'Photoluminescence properties of high-quality ZnO thin films prepared by an RF -magnetron sputtering method', Phy. B, Vol. 376-377, p. 741, 2006 https://doi.org/10.1016/j.physb.2005.12.185
  15. H. W. Liang, Y. M. Lu, D. Z. Shen, J. F. Yan, B. H. Li, J. Y. Zhang, Y. C. Liu, and X. W. Fan, 'Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy', J. Crystal Growth, Vol. 278, No. 1-4, p. 305, 2005 https://doi.org/10.1016/j.jcrysgro.2005.01.024
  16. J. S. Kang, H. S. Kang, S. S. Pang, E. S. Shim, and S. Y. Lee, 'Investigation on the origin of green luminescence from laser-ablated ZnO thin film', Thin Solid films, Vol. 443, No. 1-2, p. 5, 2003 https://doi.org/10.1016/S0040-6090(03)00975-1
  17. H. S. Kang, J. S. Kang, S. S. Pang, E. S. Shim, and S. Y. Lee, 'Variation of light emitting properties of ZnO thin films depending on post-annealing temperature', Mat. Sci. and Eng. B, Vol. 102, No. 1-3, p. 313, 2003 https://doi.org/10.1016/S0921-5107(02)00730-4
  18. S. B. Zhang, S. H. Wei, and A. Zunger, 'Intrinsic n -type versus p-type doping asymmetry and the defect physics of ZnO', Phy, Rev. B, Vol. 63, No.7, p. 075205, 2001 https://doi.org/10.1103/PhysRevB.63.075205

피인용 문헌

  1. Photoluminescence Characteristics of ZnO Nano Needle-like Rods grown by the Hot Wall Epitaxy Method vol.8, pp.5, 2007, https://doi.org/10.4313/TEEM.2007.8.5.191