마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)
- 제14권4호
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- Pages.15-20
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- 2007
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Cu pillar 범프 내의 금속간화합물 성장거동에 미치는 시효처리의 영향
Effect of Thermal Aging on the Intermetallic compound Growth kinetics in the Cu pillar bump
- 임기태 (안동대학교 신소재공학부) ;
- 이장희 (안동대학교 신소재공학부) ;
- 김병준 (서울대학교 재료공학부) ;
- 이기욱 (앰코테크놀로지코리아 기술연구소) ;
- 이민재 (앰코테크놀로지코리아 기술연구소) ;
- 주영창 (서울대학교 재료공학부) ;
- 박영배 (안동대학교 신소재공학부)
- Lim, Gi-Tae (School of Materials Science and Engineering, Andong National University) ;
- Lee, Jang-Hee (School of Materials Science and Engineering, Andong National University) ;
- Kim, Byoung-Joon (School of Materials Science and Engineering, Seoul National University) ;
- Lee, Ki-Wook (R&D Center Amkor Technology Korea Inc.) ;
- Lee, Min-Jae (R&D Center Amkor Technology Korea Inc.) ;
- Joo, Young-Chang (School of Materials Science and Engineering, Seoul National University) ;
- Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
- 발행 : 2007.12.30
초록
시효처리에 따른 Cu pillar 범프 내 다양한 계면에서의 금속간화합물 성장거동을 각각 120, 150,
Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and