Journal of IKEEE (전기전자학회논문지)
- Volume 11 Issue 4
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- Pages.247-251
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- 2007
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- 1226-7244(pISSN)
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- 2288-243X(eISSN)
An analysis of new IGBT(Insulator Gate Bipolar Transistor) structure having a additional recessedwith E-field shielding layer
- Yu, Seung-Woo (Department of Electrical Engineering, Korea University) ;
- Lee, Han-Shin (Department of Electrical Engineering, Korea University) ;
- Kang, Ey-Goo ;
- Sung, Man-Young (Department of Electrical Engineering, Korea University)
- Published : 2007.12.31
Abstract
The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.