한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제19권10호
  • /
  • Pages.889-893
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  • 2006
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Cu CMP에서 Citric Acid가 재료 제거에 미치는 영향

Effects of Citric Acid as a Complexing Agent on Material Removal in Cu CMP

  • 정원덕 (부산대학교 정밀기계공학과) ;
  • 박범영 (부산대학교 정밀기계공학과) ;
  • 이현섭 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 기계공학부)
  • 발행 : 2006.10.01
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초록

Chemical mechanical polishing (CMP) achieves surface planrity through combined mechanical and chemical means. The role of slurry is very important in metal CMP. Slurry used in metal CMP normally consists of oxidizers, complexing agents, corrosion inhibitors and abrasives. This paper investigates the effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$. In order to study chemical effects of citric acid, X-ray photoelectron spectroscopy (XPS) was peformed on Cu sample after etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but $CU/CU_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu surface decrease. According to decrease of wear resistance on Cu surface removal rate increases from $285\;{\AA}/min\;to\;8645\;{\AA}/min$ in Cu CMP.

키워드

참고문헌

  1. 김형재, 'CMP공정에서 재료 제거 기구에 영향을 미치는 접촉 계면 특성에 관한 연구', 부산대학교 공학박사학위논문, p. 1, 2003
  2. D. DeNardis, D. Rosales- Yeomans, L. Borucki, and A Philipossian, 'Characterization of copper-hydrogen peroxide film growth kinetics', Thin Soild Films, Vol. 513, No. 1-2, p. 311, 2006 https://doi.org/10.1016/j.tsf.2006.02.010
  3. S. Aksu and F. M. Doyle, 'The role of glycine in the chemical mechanical planarization of copper', Electrochemical Society, Vol. 149, No.6, p. G352, 2002
  4. 이학렬, '금속부식공학', 연경문화사, p. 15, 2000
  5. J. Hernandez, P. Wrschka, and G. S. Oehrlein, 'Surface chemistry studies of copper chemical mechanical planarization', Journal of Electrochemical Society, Vol. 148, No.7, p. G389, 2001
  6. T. Du, A. Vijayakumar, and V. Desai, 'Effect hydrogen peroxide on oxidation of copper in CMP slurries containing glycine and Cu ions', Electrochimica Acta, Vol. 49, No. 25, p. 4505, 2004 https://doi.org/10.1016/j.electacta.2004.05.008
  7. A. Leyland and A Matthew, 'On the significance of the H/E ratio in wear control: a nanocomposite coating approach to optimised tribological behaviour', WEAR, Vol. 246, No. 1-2, p. 1, 2000 https://doi.org/10.1016/S0043-1648(00)00488-9
  8. V. R. K. Gorantla, K. A. assiongbon, S. V. Babu, and D. Roy, 'Citric acid as a complexing agent in CMP investigation of surface using impedance spectroscopy', Journal of Electrochemical Society, Vol. 152, No.5, p. G404, 2005 https://doi.org/10.1149/1.1890786
  9. C. Rebholz, A. Leyland, A Matthews, C. Charitidis, S. Logothetidis, and D. Schneider, 'Correlation of elastic modulus, hardness and density for sputtered TiALBN thin films', Thin Solid Films, Vol. 514, No. 1-2, p. 81, 2006 https://doi.org/10.1016/j.tsf.2006.02.038