Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Property Comparison of Ru-Zr Alloy Metal Gate Electrode on ZrO2 and SiO2

ZrO2와 SiO2 절연막에 따른 Ru-Zr 금속 게이트 전극의 특성 비교

  • 서현상 (한국항공대학교 항공전자공학과) ;
  • 이정민 (한국항공대학교 항공전자공학과) ;
  • 손기민 (한국항공대학교 항공전자공학과) ;
  • 홍신남 (한국항공대학교 항공전자공학과) ;
  • 이인규 (한국항공대학교 항공전자공학과) ;
  • 송용승 (한국항공대학교 항공전자공학과)
  • Published : 2006.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

Keywords

References

  1. Y. Taur, D. A. Buchanan, W. Chen, D. J Frank, K. E. Ismail, S. H. Lo, G. A. Sai-Halasz, R. G. Viswanathan, H. J. Wann, S. J. Wind, and H. S. Wong, 'CMOS scaling into the nanometer regime', Proceedings of the IEEE, Vol. 85, No.4, p. 486, 1997 https://doi.org/10.1109/5.573737
  2. Y. C. Yeo, Q. Lu, P. Ranade, H. Takeuchi, K. J. Yang, I. Polishchuk, T. J. King, C. Hu, S. C. Song, H. F. Luan, and D. L. Kwong, 'Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric', IEEE Electron Device Letters, Vol. 22, No.5, p. 227, 2001 https://doi.org/10.1109/55.919237
  3. H. Zhong, S. N. Hong, Y. S. Suh, H. Lazar, G. Heuss, and V. Misra 'Propreties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices', IEDM Technical Digest, p. 467, 2001
  4. 이충근, 서현상, 홍신남, '박막 게이트 산화막에 대한 Ru-Zr 금속 게이트의 신뢰성에 관한 연구', 대한전기학회논문지, 53C권, 4호, p. 208, 2004
  5. J. R. Hauser and K. Ahmed, 'Characterization of ultrathin oxides using electrical C-V and I-V measurements', Gaithersburg, MD: Nat. Inst. Stand. Technol., 1998
  6. W. C. Lee and C. Hu, 'Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling', Symposium on VLSI Technology Digest of Technical Papers, p. 198, 2000
  7. V. Misra, H. Zhong, and H. Lazar, 'Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS', IEEE Electron Device Letters, Vol. 23, No.6, p. 354, 2002 https://doi.org/10.1109/LED.2002.1004233
  8. K. Ino, T. Ushiki, K. Kawai, I. Ohshima, T. Shinohara, and T. Ohmi, 'Highly-reliable low-resistivity bcc-Ta gate MOS technology using low-damage Xe-plasma sputtering and Si-encapsulated silicidation process', Symposium on VLSI Technology Digest of Technical Papers, p. 186, 1998