Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Spatial Distribution of Localized Charge Carriers in SONOS Memory Cells

  • Kim Byung-Cheul (Department of Electronic Engineering, Jinju National University)
  • Published : 2006.06.01
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Abstract

Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

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References

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