HVEM Application to Electron Crystallography: Structure Refinement of $SmZn_{0.67}Sb_2$

  • Kim, Jin-Gyu (Electron Microscopy Team, Korea Basic Science Institute) ;
  • Kim, Young-Min (Electron Microscopy Team, Korea Basic Science Institute) ;
  • Kim, Ji-Soo (Electron Microscopy Team, Korea Basic Science Institute) ;
  • Kim, Youn-Joong (Electron Microscopy Team, Korea Basic Science Institute)
  • Published : 2006.06.30

Abstract

The three-dimensional structure of an inorganic crystal, $SmZn_{0.67}Sb_2$ (space group $P4/nmm,\;a=4.30(3){\AA}\;and\;c= 10.27(1){\AA}$), was refined by electron crystallography utilizing high voltage electron microscopy (HVEM). Effects of instrumental resolution, image quality, beam damage and specimen tilting on the structure refinement have been evaluated. The instrumental resolution and image quality were the most important factors on the final results in the structure refinement, while the beam damage and specimen tilting effects could be experimentally minimized or controlled. The average phase errors $({\Phi}_{res})$ for the [001], [100] and [110] HVEM images of $SmZn_{0.67}Sb_2$ were $10.1^{\circ},\;9.6^{\circ}\;and\;6.8^{\circ}$, respectively. The atomic coordinates of $SmZn_{0.67}Sb_2$ were consistent within $0.0013{\AA}{\sim}0.0088{\AA}$, compared to the X-ray crystallography data for the same sample.

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