Transactions on Electrical and Electronic Materials

  • 제7권3호
  • /
  • Pages.99-102
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  • 2006
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Electrical Characteristics of CMOS Circuit Due to Channel Region Parameters in LDMOSFET

  • Kim, Nam-Soo (Department of Semiconductor Engineering, Chungbuk University) ;
  • Cui, Zhi-Yuan (Department of Semiconductor Engineering, Chungbuk University) ;
  • Lee, Hyung-Gyoo (Department of Semiconductor Engineering, Chungbuk University) ;
  • Kim, Kyoung-Won (Hynix Semiconductor Inc., Memory R&D)
  • 발행 : 2006.06.01
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초록

The electrical characteristics of CMOS inverter with LDMOSFET are studied for high power and digital circuit application by using two dimensional MEDICI simulator. The simulation is done in terms of voltage transfer characteristic and on-off switching properties of CMOS inverter with variation of channel length and channel doping levels. The channel which surrounds a junction-type source in LDMOSFET is considered to be an important parameter to decide a circuit operation of CMOS inverter. The digital logic levels of input voltage show to increase with increase of n-channel length and doping levels while the logic output levels show to the almost constant.

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참고문헌

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