The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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Design of Ultra Wide-Band CMOS Low Noise Amplifier

광대역 CMOS 저잡음 증폭기 설계

  • Published : 2006.06.01
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Abstract

An ultrawideband(UWB) $3.1{\sim}5.15$ GHz low-noise amplifier employing a novel input matching circuit and feedback topology are presented. The proposed UWB amplifier is Implemented in $0.18{\mu}m$ RF CMOS technology. Measurements show a NF of $3.4{\sim}3.9$ dB, a power gain of $12.8{\sim}14$ dB, better than -9.4 of input matching and, an input IP3 of -1 dBm, while comsuming only 14.5 mW of power.

[ $3.1{\sim}5.15$ ] GHz 대역의 광대역 저잡음 증폭기를 새로운 입력 매칭 방식과 귀환회로 방식으로 구현하였다. 제안된 광대역 증폭기는 $0.18{\mu}m$ RF CMOS 공정을 사용하여 제작하였다. 측정된 값은 잡음지수가 $3.4{\sim}3.9$ dB, 전력 이득은 $12.8{\sim}14$ dB, 입력 매칭은 -9.4이고 입럭 IP3는 -1 dBm이고, 소비 전력은 14.5 mW이다.

Keywords

References

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