Transactions of the Korean Society of Mechanical Engineers A (대한기계학회논문집A)

The Korean Society of Mechanical Engineers (대한기계학회)
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The Effects of Groove Dimensions of Pad on CMP Characteristics

패드 그루브의 치수가 CMP 연마특성에 미치는 영향

  • 박기현 (부산대학교 정밀기계공학과) ;
  • 김형재 (부산대학교 정밀기계공학과) ;
  • 최재영 (부산대학교 정밀기계공학과) ;
  • 서헌덕 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 정밀기계공학부)
  • Published : 2005.03.01
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Abstract

CMP characteristics such as material removal rate and edge effect were measured and investigated in accordance with pad grooving effect, groove width, depth and pitch. GSQ (Groove Stiffness Quotient) and GFQ (Groove Flow Quotient) were proposed to estimate pad grooving characteristics. GSQ is defined as groove depth(D) divided by pad thickness(T) and GFQ is defined as groove width(W) divided by groove pitch(P). As GFQ value increased, material removal rate increased some point but gradually saturated. It seems that material removal rate is not affected by each parameter respectively but by interaction of these parameters such as groove dimensions. In addition, an increase in GFQ and GSQ causes edge effect to be improved. Because, pad stiffness decreases as GSQ and GFQ increase. In conclusion, groove influences relative pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. The change of groove dimensions has influence on pad stiffness and slurry flow, so that polishing results such as removal rate and edge effect become changed.

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References

  1. Jeong, H.D., 1997, 'CMP-The Challenge and Opportunities,' p. 72, Semiconductor Monthly 9712, KSME
  2. Kim, H.J., 2003, 'A Study on the Interfacial Characteristics and Its Effect on Material Removal in CMP,' Ph. D Thesis, PNU, p. 108, 150, 165
  3. Rodel holdings, Inc. 2001, 'Grooved Polishing Pads for Chemical Mechanical Planarization,' PCT/US01/16870, World Intellectual Property Organization
  4. Doi, T., Kasai, T. and Nakagawa, T., 1998, '半導體 平坦化 CMP 技術', p. 96-114, Books-Hill Publishing Co., Inc
  5. Baker, A. Richard, 1996, 'The Origin of the Edge Effect in CMP,' Electrochemical Society Proceeding, Vol. 96-22, p. 229
  6. Wang, D., Lee, J., Holland, K., Bibby, T., Beaudoin, S. and Cale, T., 1997, 'Von-Mises Stress in Chamical Mechanical Polishing Process,' Journal of Electrochemical Society, Vol. 144(4), p. 1121 https://doi.org/10.1149/1.1837542
  7. Oliver, M. R., 2003, 'Chemical-Mechanical Planarization of Semiconductor Materials,' Physics and Astronomy, p. 29, 167
  8. Park, K.H., Jeong, Y.S., Kim, H.J. and Jeong, H.D., 2003, 'The Effect of Groove Density on CMP Characteristics,' KSPE Spring Conference, p. 79

Cited by

  1. Effects of Groove Shape Dimension on Lapping Characteristics of Sapphire Wafer vol.32, pp.4, 2016, https://doi.org/10.9725/kstle.2016.32.4.119
  2. Nonlinear Compression Behavior of the Grooved Polishing Pad: A Model and Its Validation vol.6, pp.4, 2017, https://doi.org/10.1149/2.0321704jss