The Journal of Korean Institute of Communications and Information Sciences (한국통신학회논문지)

The Korean Institute of Commucations and Information Sciences (한국통신학회)
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SRAM Reuse Design and Verification by Redundancy Memory

여분의 메모리를 이용한 SRAM 재사용 설계 및 검증

  • 심은성 (숭실대학교 대학원 컴퓨터학과) ;
  • 장훈 (숭실대학교 컴퓨터학과 컴퓨터구조 연구실)
  • Published : 2005.04.01
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Abstract

bIn this paper, built-in self-repair(BISR) is proposed for semiconductor memories. BISR is consisted of BIST(Buit-in self-test) and BIRU(Built-In Remapping Uint). BIST circuits are required not oがy to detect the presence of faults but also to specify their locations for repair. The memory rows are virtually divided into row blocks and reconfiguration is performed at the row block level instead of the traditional row level. According to the experimental result, we can verify algorithm for replacement of faulty cell.

본 논문에서는 내장된 메모리의 자체 테스트를 통한 메모리 고장 유무 확인과 더불어 메인 메모리의 고장난 부분을 여분의 메모리로 재배치하여 사용자로 하여금 고장난 메모리를 정상적인 메모리처럼 사용할 수 있도록 BISR(Build-In Self Repair) 설계 및 구현을 하였다. 메인 메모리를 블록 단위로 나누어 고장난 셀의 블록 전체를 재배치하는 방법을 사용하였으며, BISR은 BIST(Build-In Self Test) 모듈과 BIRU(Build-In Remapping Unit) 모듈로 구성된다. 실험결과를 통해 고장난 메모리를 여분의 메모리로 대체하여 사용자가 메모리를 사용함에 있어서 투명하게 제공하는 것을 확인 할 수 있다.

Keywords

References

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