한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권3호
  • /
  • Pages.199-205
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  • 2005
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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CdS 박막의 제조 방법에 따른 물성 및 CdS/CdTe 이종접합의 전기적 특성 분석

Characterization of CdS Thin Films and CdS/CdTe Heterojunction Prepared by Different Techniques

  • 이재형 (군산대학교 전자정보공학부)
  • 발행 : 2005.03.01
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초록

Polycrystalline cadmium sulfide(CdS) thin films were deposited on glass substrate by chemical bath deposition(CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling.

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