참고문헌
- J.-L. Pelloie, Microelectronic Engineering, 39, 155 (1997) https://doi.org/10.1016/S0167-9317(97)00173-1
- A. Uhlir, Jr., Bell Syst. Tech. J., 35, 333 (1956) https://doi.org/10.1002/j.1538-7305.1956.tb02385.x
- D, R. Turner, J. Electrochem. Soc., 105, 402 (1958) https://doi.org/10.1149/1.2428873
- M. I. J. Beale, N. G Chew, M. J. Uren, A. G. Cullis, and J. D. Benjamin, Appl, Phys. Lett., 46, 86 (1985) https://doi.org/10.1063/1.95807
- M. I. J. Beale, J. D. Benjamin, M. J. Uren, N. G. Chew, and A. G. Cullis, J. Crystal Growth, 73, 622 (1985) https://doi.org/10.1016/0022-0248(85)90029-6
- R. L. Smith and S. D. Collins, J. Appl, Phys., 71, R 1 (1992) https://doi.org/10.1063/1.350839
- Y. Watanabe, Y. Arita, T. Yokoyama, and Y. Igarashi, J. Electrochem. Soc., 122, 1351 (1975) https://doi.org/10.1149/1.2134015
- T. Unagami, Jpn. J. Appl. Phys., 19, 231 (1980) https://doi.org/10.1143/JJAP.19.231
- K. Imai, Solid-State Electron., 24, 159 (1981) https://doi.org/10.1016/0038-1101(81)90012-5
- K. Imai and H. Unno, IEEE Trans. Electron Devices, 31, 297 (1984) https://doi.org/10.1109/T-ED.1984.21518
- L. A. Nesbit, IEDM 84, 800 (1984)
- K. Barla, J. J. Yon, R. Herino, and G. Bomchil, Insulating Films on Semiconductors, ed. J. J. Simonne and J. Buxo, p.53, Elsevier Science Publishers B.V. (North-Holland) (1986)
- J. D. Benjamin, J. M. Keen, A. G. Cullis, B. Innes, and N. G. Chew, Appl, Phys. Lett., 49, 716 (1986) https://doi.org/10.1063/1.97577
- T. L. Lin and K. L. Wang, Appl, Phys. Lett., 49, 1104 (1986) https://doi.org/10.1063/1.97435
- K. Barla, G. Bomchil, R. Herino, A. Monroy, and Y. Gris, Electron. Lett., 22, 1291 (1986) https://doi.org/10.1049/el:19860886
- S. S. Tsao, IEEE Circuits and Devices Magazine, November 1987, p.3
- K. Barla, G. Bomchil, R. Herino, and A. Monroy, IEEE Circuits and Devices Magazine, November 1987, p.11
- K. Sakaguchi, N. Sato, K. Yamagata, Y. Fujiyama, and T. Yonehara, Jpn. J. Appl. Phys., 34, 842 (1995) https://doi.org/10.1143/JJAP.34.842
- N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyarna, T. Yonehara, J. Electrochem. Soc., 142, 3116 (1995) https://doi.org/10.1149/1.2048698
- T. Yonehara, K. Sakaguchi, and N. Sato, Electrochem. Soc. Proc., 95-7, p.47, The Electrochemical Society, Pennington (1995)
- N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama, Jpn. J. Appl. Phys., 35, 973 (1996) https://doi.org/10.1143/JJAP.35.973
- K. Sakaguchi, K. Yanagita, H. Kurisu, H. Suzuki, K. Ohrni, and T. Yonehara, PV99-3, Silicon-on-Insulator Technology and Devices, ed. P. L. Hemment, p.117, The Electrochemical Society, Pennington (1999)
- K. Sakaguchi, K. Yanagita, H. Kurisu, H. Suzuki, K. Ohmi, and T. Yonehara, SSDM 2000 Extended Abstracts, p.484, The Japan Society of Applied Physics, Yokohama (2000)
- N. Sato, S. Ishii, T. Yonehara, PV2000-13, CVD, ed. M. D. Allendorf and M. L. Hitchman, p.435, The Electrochemical Society, Pennington (2000)
- K. Sakaguchi and T. Yonehara, Solid State Technology, June 2000, p.88
- J.-P, Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd ed., p.50, Kluwer Academic Publishers, Boston (1997)
- N. Sato and T. Yonehara, Appl. Phys. Lett., 65, 1924 (1994) https://doi.org/10.1063/1.112818
- N. Sato, M. Ito, J. Nakayama, and T. Yonehara, SSDM 98 Extended Abstracts, p.298, The Japan Society of Applied Physics, Yokohama (1998)
- M. Ito, K. Yamagata, H. Miyabayashi, and T. Yonehara, Proceedings of 2000 IEEE International SOI Conference, p.10 (2000) https://doi.org/10.1109/SOI.2000.892744
- S. Nakashima and K. Izumi, J. Mater. Res., 8, 523 (1993) https://doi.org/10.1557/JMR.1993.0523
- S. Nakashima, T. Katayama, Y. Miyamura, A. Matsuzaki, M. Kataoka, D. Ebi, M. Imai, K. Izumi, and N. Ohwada, J. Electrochem. Soc., 143, 244 (1996) https://doi.org/10.1149/1.1836416
- J. Liu, S. S. K. Lyer, C. Hu, N. W. Cheung, R. Gronsky, J. Min, and P. Chu, Appl. Phys. Lett., 67, 2361 (1995) https://doi.org/10.1063/1.114345
- N. Hatzopoulos, W. Skorupa, and D. I. Siapkas, J. Electrocem. Soc., 147, 354 (2000) https://doi.org/10.1149/1.1393200
- R. E. Bendernagel, K. S. Choe, B. Davari, K. E. Fogel, D. K. Sadana, G. G. Shahidi, S. Tiwari, United States Patent, No.: US 6,800,518 82, October 5, 2004
- SEMI M47-1101, Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI Applications, Semiconductor Equipment and Materials International (2001)
피인용 문헌
- Investigation of Optimal Channel Doping Concentration for 0.1\;μm SOI-MOSFET by Process and Device Simulation vol.18, pp.5, 2008, https://doi.org/10.3740/MRSK.2008.18.5.272