Surface Morphology and Hole Filling Characteristics of CVD Copper

CVD법에 의해 성막된 구리의 표면 형상 및 충진 특성에 관한 연구

  • Kim, Duk-Soo (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University) ;
  • Sunwoo, Changshin (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University) ;
  • Park, Don-Hee (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University) ;
  • Kim, Jin-Hyuk (Department of Materials Science & Engineering, Chonnam National University) ;
  • Kim, Do-Heyoung (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University)
  • 김덕수 (전남대학교 공과대학 응용화학공학부, 촉매연구소) ;
  • 선우창신 (전남대학교 공과대학 응용화학공학부, 촉매연구소) ;
  • 박돈희 (전남대학교 공과대학 응용화학공학부, 촉매연구소) ;
  • 김진혁 (전남대학교 공과대학 신소재공학부) ;
  • 김도형 (전남대학교 공과대학 응용화학공학부, 촉매연구소)
  • Received : 2004.12.27
  • Accepted : 2005.02.18
  • Published : 2005.02.28

Abstract

This article describes a study of chemical vapor deposition (CVD) of copper thin films on TiN substrates using (HFAC)Cu(DMB) as a precursor. The surface morphology and conformality of the Cu films as functions of substrate temperature and the presence or absence of iodine have been investigated. The surface roughness was increased significantly along with decrement of the step coverage by increasing the deposition temperature. The highest conformal films with the lowest surface roughness were obtained using the process of copper CVD, where iodine vapor were discretely introduced into the reactor during the growth of copper.

본 연구에서는 유기금속 전구체인(HFAC)Cu(DMB)을 이용하여 구리를 제조하고, 기판온도 및 요오드 화합물이 증착 구리막의 표면 형상 및 충진 특성에 미치는 영향을 살펴보았다. 증착 온도가 높을수록 표면 형상이 거칠어지고 충진 특성이 악화되었으며, 요오드를 사용하여 증착할 경우 표면 거칠기와 충진 특성이 개선됨을 알 수 있었다. 이때 요오드 화합물과 전구체를 동시에 반응기에 유입할 경우보다 구리의 씨앗층을 증착하고 요오드 화화물을 반응기에 유입한 후 다시 구리 증착을 진행하는 경우가 좀 더 효과가 컸다.

Keywords

Acknowledgement

Supported by : 한국학술진흥재단

References

  1. Chang, C.-L., Lin, C.-L. and Chen, M.-C., 'Effect of TiN Substrate Plasma Treatment on Copper Chemical Vapor Deposition,' Jpn. J. Appl. Phys., Part 1, 43, 2442-2446(2004) https://doi.org/10.1143/JJAP.43.2442
  2. Awaya, N. and Arita, Y., 'Double-level Copper Interconnections Using Selective Copper CVD,' J. Electronic Mat., 21, 959-964(1992) https://doi.org/10.1007/BF02684203
  3. Kim, D. H., Lee, Y. J., Park, C. O., Park, J. W. and Kim, J. J., 'Nucleation Reactions and Film Growth of Copper on TiN using Hexafluoroacetylacetonate Copper(I) Trimethyl-Vinylsilane,' Chem. Eng. Comm., 152, 307-317(1996) https://doi.org/10.1080/00986449608936570
  4. Doppelt, P., Semaltianos, N., Deville Cavellin, C., Pastol, J. L. and Ballutaud, D., 'High Affinity Self-assembled Monolayers for Copper CVD,' Microelectronic Engineering, 76, 113-118(2004) https://doi.org/10.1016/j.mee.2004.07.023
  5. Josell, D., Wheeler, D. and Moffat, T. P., Electrochem and Solid-State Lett., Superconformal Deposition by Surfactant-catalyzed Chemical Vapor Deposition, 5, C44-C47(2002) https://doi.org/10.1149/1.1449304
  6. Hwang, E. S. and Lee, J., 'Surfactant-Catalyzed Chemical Vapor Deposition of Copper Thin Films,' Chem. Mater., 12, 2076-2081 (2000) https://doi.org/10.1021/cm990805+
  7. Hwang, E. S. and Lee, J., 'Surfactant-Assisted Metallorganic CVD of (111)-Oriented Copper Films with Excellent Surface Smoothness,' Electrochem. and Solid-State Lett., 3, 138-140(2000) https://doi.org/10.1149/1.1390981
  8. Choi, K-K., Pyo, S. G., Lee, D. W. and Rhee, S-W., 'Metalorganic Chemical Vapor Deposition of Copper using (hexafluoroacetylacetonate) Cu(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System,' Jpn. J. Appl. Phys., Part 1, 41, 2962-2968(2002) https://doi.org/10.1143/JJAP.41.2962
  9. Choi, K.-K. and Rhee, S-W., 'Effect of Carrier Gas on Chemical Vapor Deposition of Copper with (hexafluoroacetylacetonato) Cu(I)(3,3-dimethyl-1-butene),' J. Electrochem. Soc., 148, C473-C478(2001) https://doi.org/10.1149/1.1375168
  10. Senkevich, J. J., Yang, G. R., Lu, T. M., Cale, T. S. Jezeweski, C. and Lanford, W. A., 'Phosphorus Atomic Layers Promoting the Chemisorption of Highly Polarizable Transition Metallorganic,' Chem. Vap. Deposition, 8, 189-192(2002) https://doi.org/10.1002/1521-3862(20020903)8:5<189::AID-CVDE189>3.0.CO;2-Y
  11. Lin, J. L. and Bent, B. E., 'Carbon-halogen Bond Dissociation on Copper Surfaces: Effect of Alkyl Chain Length,' J. Phys. Chem., 96, 8529-8538(1992) https://doi.org/10.1021/j100200a059