한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권9호
  • /
  • Pages.803-809
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  • 2005
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Ruthenium CMP에서 Cerium Ammonium Nitrate와 알루미나 연마 입자가 연마 거동에 미치는 영향

Effect of Cerium Ammonium Nitrate and Alumina Abrasive Particles on Polishing Behavior in Ruthenium Chemical Mechanical Planarization

  • 이상호 (한양대학교 금속재료공학과) ;
  • 이승호 (한양대학교 금속재료공학과) ;
  • 강영재 (한양대학교 금속재료공학과) ;
  • 김인권 (한양대학교 금속재료공학과) ;
  • 박진구 (한양대학교 금속재료공학과)
  • 발행 : 2005.09.01
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초록

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

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