JSTS:Journal of Semiconductor Technology and Science

  • 제5권3호
  • /
  • Pages.159-167
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  • 2005
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Physics-based Algorithm Implementation for Characterization of Gate-dielectric Engineered MOSFETs including Quantization Effects

  • Mangla, Tina (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus) ;
  • Sehgal, Amit (Department of Physics and Electronics, Hansraj College, University of Delhi) ;
  • Saxena, Manoj (Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi) ;
  • Haldar, Subhasis (Department of Physics, Motilal Nehru College, University of Delhi) ;
  • Gupta, Mridula (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus) ;
  • Gupta, R.S. (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus)
  • 발행 : 2005.09.30
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초록

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

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