Transactions on Electrical and Electronic Materials

  • 제6권2호
  • /
  • Pages.57-62
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  • 2005
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Room Temperature Preparation of Poly-Si Thin Films by IBE with Substrate Bias Method

  • Cho, Byung-Yoon (Division of Electronics and Information, Chonbuk National University) ;
  • Yang, Sung- Chae (Division of Electronics and Information, Chonbuk National University) ;
  • Han, Byoung-Sung (Division of Electronics and Information, Chonbuk National University) ;
  • Lee, Jung-Hui (Division of Electronics and Information, Chonbuk National University) ;
  • Yatsui Kiyoshi (Extreme Energy-density Research Institute, Nagaoka University of Technology)
  • 발행 : 2005.04.01
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초록

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

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참고문헌

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