Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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The jitter and phase noise caused by 1/f noise of MOSFET in 2.75 GHz CMOS ring oscillator

  • Park, Se-Hoon (Electronic Engineering. Andong National University)
  • 박세훈 (안동대학교 전자공학과)
  • Published : 2005.01.30
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Abstract

It has been known that 1/f noise of MOSFET is generated by superposition of random telelgraph signals (RTS). In this study, jitters and phase noise caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the output of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

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References

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