JSTS:Journal of Semiconductor Technology and Science

  • 제4권2호
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  • Pages.94-99
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  • 2004
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Novel properties of erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

  • Jang, Moon-Gyu (Nano-electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute) ;
  • Kim, Yark-Yeon (Nano-electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute) ;
  • Shin, Jae-Heon (Nano-electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute) ;
  • Lee, Seong-Jae (Nano-electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute) ;
  • Park, Kyoung-Wan (Department of Nano Science and Technology, University of Seoul)
  • 발행 : 2004.06.30
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초록

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

키워드

참고문헌

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