Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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The Geometric Effect in Pd Assisted Ni-MILC

Pd에 의해 결정화 속도가 향상된 Ni-MILC에서 기하학적 형상이 결정화 속도에 미치는 영향

  • Kim Young-Su (School of Materials Science & Engineering, Seoul National University) ;
  • Joo Seung-Ki (School of Materials Science & Engineering, Seoul National University)
  • 김영수 (서울대학교 재료공학부) ;
  • 주승기 (서울대학교 재료공학부)
  • Published : 2004.07.01
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Abstract

It is well-known that adjacent Pd-MILC enhanced the rate of Ni-MILC. And the phenomena can be explained by tensile stress propagation between amorphous silicon and Pd silicide which is catalyst of crystallization. In this study, we modified tensile stress by changing geometry of amorphous silicon to prove that there is a direct relation between tensile stress and Ni-MILC rate enhancement. When the tensile stress concentrated, the Ni-MILC rate was enhanced more(14.5 ${\mu}m/hr$) by Pd-MILC while the conventional Pd-MILC enhanced Ni-MILC rate was 11 ${\mu}m/hr$. As the result we can be sure that the tensile stress causes the enhancement of Ni-MILC rate.

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References

  1. K. Nakazawa, J. Appl. Phys., 69(3), 1703(1991) https://doi.org/10.1063/1.347215
  2. H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, J. Iwata, S. Tsuda and S. Nakano, IEDM 1991 Tech. Dig., 565 (1991) https://doi.org/10.1109/IEDM.1991.235407
  3. S. W. Lee and S. K. Joo, IEEE Electron Device Lett., 17(4), 160 (1996) https://doi.org/10.1109/55.485160
  4. S. W. Lee and Y. C. Jeon and S. K. Joo Appl. Phys. Lett., 66(13), 1671, (1995) https://doi.org/10.1063/1.113888
  5. Tae-Hyoung Ihn, Tae-Kyung Kim, Byung-Il Lee and Seung-Ki Joo, Microelectronics Reliability 39, 53 (1998) https://doi.org/10.1016/S0026-2714(98)00160-7
  6. Zhinguo Meng, Mingxiang Wang and Man Wong, 47(2), 404 (2000) https://doi.org/10.1109/16.822287
  7. M. Man Wong, J. Jhonghe Jin, G. A. Gururaj A. Bhat, P. C. Philip C. Wong and H. S. Hoi Sing Kwok, IEEE Trans. Electron Devices, 47, 1061 (2000) https://doi.org/10.1109/16.841241
  8. S. -w. Lee, B. -I. Lee, T. -K. Kim and S. -K. Joo J. Appl. Phys., 85(10), 7180 (1999) https://doi.org/10.1063/1.370529
  9. M. J. Aziz, P.C. Sabin and G.-Q Lu, Phys. Rev. B, 44(18), 9812 (1991) https://doi.org/10.1103/PhysRevB.44.9812
  10. E. Nygren, M. J. Aziz, D. Tunbull, J. M. Poate, D.C. Jacobson and R. Hull, Appl. Phys. Lett. 47(3), 232 (1985) https://doi.org/10.1063/1.96228
  11. G. Q Lw, E. Nygren, M.J. Aziz, J. Appl. Phys. 70(10), 5323 (1991) https://doi.org/10.1063/1.350243