References
- Mater. Res. Soc. Bull. v.18 no.6 Copper-based metallization for ULSI application J.Li;R.S.Blewer;J.W.Mayer
- Thin Solid Films v.262 Copper interconnection integration and reliability C.K.Hu;B.Luther;F.B.Kaufman;J.Humnel;C.Uzoh;D.J.Pearson https://doi.org/10.1016/0040-6090(94)05807-5
- 전기전자재료학회논문지 v.11 no.12 Chemical Mechanical Polishing (CMP) 공정을 이용한 Mutilevel Metal 구조의 광역 평탄화에 관한 연구 김상용;서용진;김태형;이우선;김창일;장의구
- Trans. on EEM v.4 no.6 A study on the corrosion effects by addition of complexing agent in the copper CMP process Sang-Yong Kim;Nam-Hoon Kim;In-Pyo Kim;Eui-Goo Chang;Yong-Jin Seo;hun-Sang Chung
- Trans. on EEM v.4 no.2 Roles of phosphoric acid in slurry for Cu and TaN CMP Sang-Yong Kim;Jong-Heun Lim;Chong-Hee Yu;Nam-Hoon Kim;Eui-Goo Chang
- Chemical mechanical planarization of microelectronic materials J.M.Steigerwald;S.P.Murarka;R.J.Gutmann
- Electronics Letters v.39 no.9 H₃PO₄addition to slurry for Cu and TaN CMP S.Y.Kim;N.H.Kim;J.H.Lim;E.G.Chang https://doi.org/10.1049/el:20030491
- Jpn. J. Appl. Phys. v.41 no.3A Effect of organic acids in copper chemical mechanical planarization slury on slurry stability and particle contamination on copper surfaces D.H.Eom;J.G.Park;E.S.Lee https://doi.org/10.1143/JJAP.41.1305
- Journal of Electrostatics v.46 Uni-polar þ eld charging of particles: effects of particle conductivity and rotation C.A.P.Zevenhoven https://doi.org/10.1016/S0304-3886(98)00054-0
- Phys. Lett. B. v.415 The role of the quantum dispersion in the coulomb correction of Bose-Einstein correltions H.Merlitz;D.Pelte https://doi.org/10.1016/S0370-2693(97)01284-7
- J. Dispersion Science and Technology v.20 Studies of adhesion of metal particles to silica particles based on zeta potential measurements R.Linberg;G.Sundholm;J.Sjiom;P.Ahonen;E.I.Kauppinen https://doi.org/10.1080/01932699908943816
- MRS Bulletin v.27 no.10 Development and application of an abrasive-free polishing solution for copper M.Hanazono;J.Amanokura;Y.Kamigata https://doi.org/10.1557/mrs2002.248
- 2002 Mat. Res. Soc. Symp. Proc. v.732E Removal of TaN/Ta barrier with variable selectivity to copper and TEOS J.Bian;J.Quanci;M.VanHanehem