참고문헌
- S. Maruno, Y. Abe, T. Ozeki, T. Nakamoto, and N. Yoshida, 'Isothermal capacitance transient spectroscopy of pseudomorphic high-electron-mobility transistors,' Appl. Phys. Lett., Vol. 82, pp. 3339-3341, May 2003 https://doi.org/10.1063/1.1572555
- S.D. Cho, H.T. Kim, and D.M. Kim, 'Physical mechanisms on the abnormal gate leakage currents in pseudomorphic high electron mobility transistors,' IEEE Trans. Electron Devices, Vol.50, no.4, pp.1148-1152, April 2003 https://doi.org/10.1109/TED.2003.812493
- R. Menozzi, 'Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimetrewave applications,' Semiconductor Science Technology, Vol. 13, pp. 1053-1063, Oct. 1998 https://doi.org/10.1088/0268-1242/13/10/001
- S. Takamiya, M. Harayama, T. Sugimura, T. Tsuzuku, T. Taya, K. Iiyama, and S. Hashimoto, 'Reverse currents of Schottky gates of III-V MESFET/HEMTS: field emission and tunnel currents,' Solid-State Electronics, Vol. 42, pp. 447-451, March 1998 https://doi.org/10.1016/S0038-1101(97)00264-5
- G. Meneghesso, A. Neviani, R. Oesterholt, M. Matloubian, T. Liu, J.J. Brown, C. Canali, and E. Zanoni, 'On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness,' IEEE Trans. Electron Devices, Vol. 46, pp.2-9, Jan. 1999 https://doi.org/10.1109/16.737434
- R.T. Webster, S. Wu, and A.F.M. Anwar, 'Impact ionization in InAlAs/InGaAs/InAlAs HEMT's,' IEEE Electron Device Lett., Vol.21, pp.193-195, May 2000 https://doi.org/10.1109/55.841293
-
D.-H. Kim, S.-W. Kim, S.-C. Hong, S.-W. Paek, J.-H. Lee, K.-W. Jung, and K.-S. Seo, 'fabrication and characterization of
$0.2{\mu}m$ InAlAs/InGaAs M-HEMT's with inverse step-graded InAlAs buffer on GaAs substrate,' J. Semiconductor Tech. and Science, Vol.1, pp.111-115, 2001 - S. Takatani, H. Matsumoto, J. Shigeta, K. Ohshika, T. Yamashita, and M. Fukui, 'Generation mechanism of gate leakage current due to reverse-voltage stress i-AlGaAs/n-GaAs HIGFET's,' IEEE Trans. Electron Devices, Vol. 45, pp.14-20, Jan. 1998 https://doi.org/10.1109/16.658806
- B. Georgescu, M.A. Py, A. Souifi, and G. Guilot, 'New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's,' IEEE Electron Device Lett., Vol. 19, pp.154-156, May 1998 https://doi.org/10.1109/55.669733
- N. Labat, N. Saysset, A. Touboul, Y. Danto, P. Cova and F. Fantini, 'Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization,' Microelectronics Reliability, Vol.37, pp. 1675-1678, Oct. 1997 https://doi.org/10.1016/S0026-2714(97)00137-6
- Y. C. Chou, G. P. Li, Y. C. Chen, C.S. Wu, K.K. Yu, and T. A. Midford, 'Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs,' IEEE Electron Device Lett., Vol.18, pp. 479-481, Oct. 1996 https://doi.org/10.1109/55.537081
- M. H. Somerville, J. A. del Alamo, and P. Saunier, 'Offstate breakdown in power pHEMTs: the impact of the source,' IEEE Trans. Electron Devices, Vol. 45, pp. 1883-1889, Sept. 1998 https://doi.org/10.1109/16.711351
-
D.-H. Kim, S.-J. Kim, Y.-H. Kim, S.-W. Kim, and K.-S. Seo, '40nm InGaAs HEMT's with 65% strained channel fabricated with damage-free
$SiO_2/SiN_x$ side-wall gate process,' J. Semiconductor Tech. and Science, Vol.3, pp.27-32, 2003 -
C.-L. Wu and W.-C. Hsu, 'Enhanced resonant tunneling real-space transfer in
${\delta}-doped$ GaAs/InGaAs gated dualchannel transistors grown by MOCVD,' IEEE Trans. Electron Devices, Vol. 43, pp. 207-212, Feb. 1996 https://doi.org/10.1109/16.481719