• Title/Summary/Keyword: positive hump

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Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs

  • Kim, Yu-Mi;Jeong, Kwang-Seok;Yun, Ho-Jin;Yang, Seung-Dong;Lee, Sang-Youl;Lee, Hi-Deok;Lee, Ga-Won
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.1
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    • pp.47-49
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    • 2012
  • In this paper, we investigated the anomalous hump in the bottom gate staggered a-IGZO TFTs. During the positive bias stress, a positive threshold voltage shift was observed in the transfer curve and an anomalous hump occurred as the stress time increased. The hump became more serious in higher gate bias stress while it was not observed under the negative bias stress. The analysis of constant gate bias stress indicated that the anomalous hump was influenced by the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer.

Analysis of An Anomalous Hump Phenomenon in Low-temperature Poly-Si Thin Film Transistors (저온 다결정 실리콘 박막 트랜지스터의 비정상적인 Hump 현상 분석)

  • Kim, Yu-Mi;Jeong, Kwang-Seok;Yun, Ho-Jin;Yang, Seung-Dong;Lee, Sang-Youl;Lee, Hi-Deok;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.900-904
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    • 2011
  • In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

The Impact of Wage Scheme and Transparency of Performance Evaluation on the Productivity (기업의 보상체계와 업무평가 투명성의 생산성 효과)

  • Lee, Sangheon
    • Journal of Labour Economics
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    • v.37 no.1
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    • pp.59-85
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    • 2014
  • This paper analyses an impact of wage scheme and transparency of performance evaluation on the productivity. The main findings in this paper are as follows: First, the effect of wage scheme based on seniority system on the productivity is worse off than the performance pay. Second, there is a positive relationship between an incentive and the productivity, but, in the case of firms which individually informs the results of performance evaluation to their workers, it shows the hump-shaped relationship. Third, though the wage scheme is based on the performance, if the evaluation system is not transparent, the impact of incentive on the productivity is disappeared. Consequently, this paper implies that the appropriate incentive and the transparent performance evaluation system are required so as to improve the productivity.

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Electrical Characteristics of InAlAs/InGaAs/InAlAs Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation

  • Kim, H.T.;Kim, D.M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.3
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    • pp.145-152
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    • 2003
  • Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

Estimation of Hydraulic Parameters of a Fractured Rock Aquifer Using Derivative Analysis (변동량 분석을 이용한 암반대수층의 수리학적 매개변수 산출)

  • Kim, Bum-Su;Yang, Dong-Chul;Yeo, In-Wook
    • Journal of Soil and Groundwater Environment
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    • v.15 no.6
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    • pp.46-52
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    • 2010
  • Derivative analysis, based on the derivative of the drawdown as a function of time (i.e., rate of drawdown change), was applied to the evaluation of hydraulic parameters of the aquifer as an aid of the aquifer test interpretation based on the Theis solutions. Pumping tests were conducted at a coastal fractured aquifer in Muan county, Korea, of which the drawdown data, measured at the two observation wells, were used for derivative analysis. Wellbore storage and transition period were hard to identify at conventional log-log and semi long plots, but was easily recognized by distinctive curves of positive unit slope, hump and negative unit slope in the derivative plot. For the observation well of OW-2 at which wellbore storage and transition lasted over an hour, conventional aquifer analysis would suffer from the uniqueness problems and in further result in erroneous hydraulic parameters. Derivative analysis was found to be effective for distinguishing the drawdown data directly reflecting the aquifer property from those reflecting non aquifer effects such as wellbore storage and transition, which offers a unified methodology to yield correct hydraulic parameters from aquifer test data.

Species Richness of Aquatic Insects in Wetlands along the Altitudinal Gradient in Jeju, Korea : Test of Rapoport's Rule (고도에 따른 제주 습지 수서곤충의 종풍부성 변화 : Rapoport 법칙의 검정)

  • Jeong, Sang-Bae;Kim, Dong-Soon;Jeon, Hyeong-Sik;Yang, Kyoung-Sik;Kim, Won-Taek
    • Korean journal of applied entomology
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    • v.49 no.3
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    • pp.175-185
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    • 2010
  • The effect of altitude and latitude on biodiversity (or species richness) has been a topic of great interest for many biogeographers for a long time. This study was conducted to examine the dynamics of species richness of aquatic insects along the altitudinal gradient in 24 wetlands on Mt. Halla, Jeju and test the Rapoport's rule. The species richness of aquatic insects monotonically decreased with increasing altitude, showing a significant inverse correlation (r = -0.64). However, the pattern of species richness with altitude showed a hump-shaped relationship, with a peak in species richness at intermediate elevations when the effects of area were removed. The altitudinal range of species tended to increase with increasing altitude, as Rapoport's rule predicts. There was a positive correlation between the altitudinal range size and the midpoint of the range size (Median) except for Hemiptera (Odonata: r = 0.75, Hemiptera: r = -0.22, Coleoptera: r = 0.72, Total: r = 0.55). Also, the extent of average altitudinal range of high-altitude species was 904.3m, and it was significantly wider than a 469.5m of low-altitude species. Consequently, the species richness of aquatic insects in wetlands on Mt. Halla along the altitudinal gradient well supported Rapoport's rule.

Studies on the Surface Charge Characteristics and Some Physico-Chemical Properties of two Synthetic Iron Hydrous Oxides and one Aluminum Hydroxide Minerals (합성(合成) 수산화(水酸化) 철(鐵) 광물(鑛物)과 수산화(水酸化) 알루미늄 광물(鑛物)의 표면(表面) 전하(電荷) 및 물리화학적(物理化學的) 특성(特性)에 관(關)한 연구(硏究))

  • Lim, Sookil H.
    • Korean Journal of Soil Science and Fertilizer
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    • v.17 no.2
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    • pp.147-154
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    • 1984
  • Two Fe-hydrous oxide A,B and one Al-hydroxide minerals were synthesized precipitating Fe $Cl_3$ and $AlCl_3$ with alkali solution(NaOH) at pH 6.0, 12.0 and 4.5 respectively, for precise understanding of physico-chemical and surface charge characteristics of soils in which these minerals are dominant. Identification of these final products, effect of free and amorphous materials on X-ray diffraction analysis, particle size distribution and surface change characterics of these minerals were performed. Fe-hydroxide A and B were identified as great deal of X-ray amorphous material and as goethite with large amount of X-ray amorphous material, respectively. Dehydration by oven at $105^{\circ}C$ of these minerals exhibited akaganeite peaks with low X-ray amorphous hump and pure goethite peaks for Fe-hydroxide A and B, respectively. Both minerals, however, turned into hematite upon firing at $550^{\circ}C$. On the other hand, Al-hydroxide identified as mixture of gibbsite and bayerite of around 7:3 ratio. Application of sodium dithionite and ammonium oxalate solutions for removal of free or amorphous Fe and Al from these minerals revealed that only peak intensities of Al-hydroxide system were enhanced upon Al-extraction by oxalate solution even though dithionite solution was much powerful to extract Fe from Fe-hydrous oxide systems. Original(wet) Fe-hydrous oxide A has the highest specific surface and surface charge development(negative and positive), and the greatest amount of less than $2{\mu}m$ sized particles. Specific surface and clay sized particles(less than $2{\mu}m$) of Fe-hydrous oxide A, however, were drastically reduced upon dehydration($P_2O_5$ and oven drying) compare to the rest minerals. The Z.P.C. of these synthetic minerals were 8.0-8.5, 7.5-8.0 and 5.5-6.0 for Fe-hydrous oxide A, B and Al-hydroxide, respectively.

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