JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Investigation of Oxygen Incorporation in AlGaN/GaN Heterostructures

  • Jang, Ho-Won (Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH)) ;
  • Baik, Jeong-Min (Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH)) ;
  • Lee, Jong-Lam (Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH)) ;
  • Shin, Hyun-Joon (Beamline Department, Pohang University of Science and Technology(POSTECH)) ;
  • Lee, Jung-Hee (School of Electronic Engineering and Computer Science, Kyungpook National University)
  • Published : 2003.06.01
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Abstract

Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.

Keywords

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