Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Development of Trenched SOI 1X2 Thermo-Optic Switch for Improvement of Thermal Diffusion Effect

열확산 효과 개선을 위한 트렌치 구조의 SOI 1X2 열광학 스위치 개발

  • Published : 2003.12.01
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Abstract

In order to reduce driving power consumption, we propose and fabricate a new structure of asymmetric SOI 1${\times}$2 thermo-optic switch that has a back side silicon trenched structure. Compared to conventional SOI thermo optic switches without heat sink structure, it shows an improvement of switching power reduction from about 4 watt to 1.8 watt without sacrificing cross talk of about 20 ㏈ at the light wavelength of 1.55 $\mu\textrm{m}$. Here we also described the main design consideration and fabrication procedure for the proposed device.

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References

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