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Crystalline Properties of Carbon Nitride films According to Substrates and Growth Conditions

기판과 성장조건에 따른 질화탄소막의 결정성장 특성

  • 이지공 (경남대학교 전기전자공학부) ;
  • 이성필 (경남대학교 전기전자공학부)
  • Published : 2003.12.01

Abstract

Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

Keywords

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